- 您现在的位置：买卖IC网 > Datasheet目录393 > ALD1108EPCL (Advanced Linear Devices Inc)MOSFET N-CH ADJ QUAD 16PDIP Datasheet资料下载
参数资料
| 型号： | ALD1108EPCL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH ADJ QUAD 16PDIP |
| 标准包装： | 25 |
| 系列： | EPAD® |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10V |
| 电流 - 连续漏极(Id) @ 25° C： | 3mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 600mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V + referenced to V-
Supply voltage, V S referenced to V-
Differential input voltage range
Power dissipation
Operating temperature range SAL, PAL, SCL, PCL packages
DA, DC packages
Storage temperature range
Lead temperature, 10 seconds
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
OPERATING ELECTRICAL CHARACTERISTICS
T A = 25 ° C V+ = +5.0V unless otherwise specified
-0.3V to +10.6V
± 5.3V
-0.3V to +0.3V
600mW
0 ° C to +70 ° C
-55 ° C to +125 ° C
-65 ° C to +150 ° C
+260 ° C
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min Typ
Max
Min
Typ
Max
Unit
Conditions
Supply Voltage 1
V+
10.0
10.0
V
Initial Threshold Voltage 2
V t i
0.990
1.000
1.010
0.990
1.000
1.010
V
I DS = 1 μ A T A = 21 ° C
E-trim Vt Range
Drain - Gate Connected
Voltage Tempco
V t
TCV DS
1.000
-1.6
-0.3
3.000
1.000
-1.6
-0.3
3.000
V
mV/ ° C
mV/ ° C
I D = 5 μ A
I D = 50 μ A
0.0
+2.7
0.0
+2.7
mV/ ° C
mV/ ° C
I D = 68 μ A
I D = 500 μ A
Initial Offset Voltage 3
Tempco of V OS
Differential Threshold Voltage 4
V OS i
TCV OS
DV t
1
5
5
2.000
1
5
5
2.000
mV
μ V/ ° C
V
V DS1 = V DS2
Tempco of Differential
Threshold Voltage 4
TCDV t
0.033
0.033
mV/ ° C
Long Term Drift
Long Term Drift Match
Drain Source On Current
? V t / ? t
? V t / ? t
I DS(ON)
-0.02
-5
3.0
-0.05
-0.02
-5
3.0
-0.05
mV
μ V
mA
1000 Hours
1000 Hours
V G =V D = 5V V S = 0V
V t = 1.0
Drain Source On Current 4
I DS(ON)
0.8
0.8
mA
V G =V D = 5V V S = 0V
V t = 3.0
Initial Zero Tempco Voltage 3
Zero Tempco Current
Initial On-Resistance 3
On-Resistance Match
V ZTC i
I ZTC
R ON i
? R ON
1.52
68
500
0.5
1.52
68
500
0.5
V
μ A
?
%
V t = 1.000V
V GS ?= 5V V DS = 0.1V
NOTES:
1. Supply voltage is limited by Threshold Voltage. V+ must be the most positive supply rail and V- must be at the most negative supply rail. Source
terminals other than those labeled as V- can be at any voltage between V- and V+.
2. Initial Threshold Voltage is set at the factory. If no EPAD Vt trimming is intended by user, then this is also the final or permanent threshold voltage
value.
3. Initial and Final values are the same unless deliberately changed by user.
4. These parameters apply only when Vt of one or more of the devices are to be changed by user.
ALD1108E/ALD1110E
Advanced Linear Devices
3 of 14
相关PDF资料 |
PDF描述 |
|---|---|
| ALD1115MAL | MOSFET N/P-CH 13.2V 8MSOP |
| ALD1116SAL | MOSFET 2N-CH 13.2V 4.8MA 8SOIC |
| ALD111933SAL | MOSFET 2N-CH 10.6V 8SOIC |
| ALD114804APCL | MOSFET N-CH 10.6V QUAD 16PDIP |
| ALD114835PCL | MOSFET N-CH 10.6V QUAD 16PDIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1108ESC | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩) |
| ALD1108ESCL | 功能描述:MOSFET Quad EPAD(R) Prog RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110900 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110900A | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110900APA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSET ARRAY |
发布紧急采购，3分钟左右您将得到回复。