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参数资料
| 型号： | ALD1108EPCL |
| 厂商： | Advanced Linear Devices Inc |
| 文件页数： | 7/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH ADJ QUAD 16PDIP |
| 标准包装： | 25 |
| 系列： | EPAD® |
| FET 型： | 4 N 通道（半桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 10V |
| 电流 - 连续漏极(Id) @ 25° C： | 3mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 500 欧姆 @ 5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 1µA |
| 功率 - 最大： | 600mW |
| 安装类型： | 通孔 |
| 封装/外壳： | 16-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 16-PDIP |
| 包装： | 管件 |
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
5
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
100
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. AMBIENT TEMPERATURE
Zero Temperature
4
-55 ° C
-25 ° C
Coefficient (ZTC)
125 ° C
ZTC
125 ° C
ZTC
125 ° C
3
0 ° C
50
2
V t
{
V t
{
V t
{
= 1.0V
= 1.2V
= 1.4V
1
- 25 ° C
- 25 ° C
- 25 ° C
0
70 ° C
125 ° C
0
0
1
2
3
4
5
1.0
1.2
1.4
1.6
1.8
2.0
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE
(VGS = VDS) (V)
+10
CHANGE IN DIFFERENTIAL THRESHOLD
VOLTAGE vs. AMBIENT TEMPERATURE
10000
DRAIN SOURCE ON CURRENT, BIAS
CURRENT vs. ON - RESISTANCE
+8
+6
+4
+2
0
-2
REPRESENTATIVE UNITS
1000
100
10
D
V DS
V DS = R ON ? I DS(ON)
V GS = +0.9V to +5.0V
V DS = 5.0V
-4
-6
-8
1.0
V GS
S
I DS(ON)
V DS = 0.5 V
-10
0.1
-50
-25
0
25
50
75
100
125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE ( ° C)
GATE SOURCE VOLTAGE vs. DRAIN
SOURCE ON CURRENT
ON - RESISTANCE (K ? )
DRAIN SOURCE ON CURRENT vs.
OUTPUT VOLTAGE
5
D
V DS
5
4
V GS
S
I DS(ON)
V DS = 0.5V
T A = +125 ° C
4
V t = 1.000V
VDS = VGS
T A = -55 ° C
3
3
2
V DS = 0.5V
T A = +25 ° C
V DS = 5V
T A = +25 ° C
2
T A = 0 ° C
T A = +50 ° C
1
1
0
V DS = 5V
T A = +125 ° C
V DS = R ON ? I DS(ON)
0
T A = +125 ° C
0.1
1
10
100
1000
10000
0
1
2
3
4
5
DRAIN SOURCE ON CURRENT ( μ A)
OUTPUT VOLTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
7 of 14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ALD1108ESC | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPAD⑩) |
| ALD1108ESCL | 功能描述:MOSFET Quad EPAD(R) Prog RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ALD110900 | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110900A | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:Advanced Liner Devices.Inc QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSFET ARRAY |
| ALD110900APA | 制造商:ALD 制造商全称:Advanced Linear Devices 功能描述:QUAD/DUAL N-CHANNEL ZERO THRESHOLD EPAD MATCHED PAIR MOSET ARRAY |
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