参数资料
型号: ALD1108EPCL
厂商: Advanced Linear Devices Inc
文件页数: 4/14页
文件大小: 0K
描述: MOSFET N-CH ADJ QUAD 16PDIP
标准包装: 25
系列: EPAD®
FET 型: 4 N 通道(半桥)
FET 特点: 标准
漏极至源极电压(Vdss): 10V
电流 - 连续漏极(Id) @ 25° C: 3mA
开态Rds(最大)@ Id, Vgs @ 25° C: 500 欧姆 @ 5V
Id 时的 Vgs(th)(最大): 1V @ 1µA
功率 - 最大: 600mW
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-PDIP
包装: 管件
OPERATING ELECTRICAL CHARACTERISTICS (cont'd)
T A = 25 ° C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
Symbol
Min Typ
Max
Min
Typ
Max
Unit
Conditions
Transconductance
Transconductance Match
gm
? gm
1.4
25
1.4
25
mA/V
μ A/V
V D = 10V,V G =V t + 4.0
V D = 10V,V G =V t + 4.0
Low Level Output
Conductance
g OL
6
6
μ A/V
V G = V t +0.5V
High Level Output
Conductance
g OH
68
68
μ A/V
V G = V t +4.0V
Drain Off Leakage Current
I D(OFF)
5
400
5
400
pA
4
4
nA
T A = 125 ° C
Gate Leakage Current
I GSS
10
100
10
100
pA
1
1
nA
T A = 125 ° C
Input Capacitance
C ISS
25
25
pF
Cross Talk
60
60
dB
f = 100KHz
Relaxation Time Constant 4
t RLX
2
2
Hours
Relaxation Voltage 4
V RLX
-0.3
-0.3
%
1.0V ≤ V t ≤ 3.0V
E-TRIM CHARACTERISTICS
T A = 25 ° C V+ = +5.0V unless otherwise specified
ALD1108E
ALD1110E
Test
Parameter
E-trim V t Range 4
Symbol
V t
Min Typ
1.000
Max
3.000
Min
1.000
Typ
Max
3.000
Unit
V
Conditions
Resolution of V t
E-trim Pulse Step 4
Change in V t Per
RV t
? V t / N
0.1
0.5
1
0.1
0.5
1
mV
mV/ pulse
V t = 1.0V
E-trim Pulse 4
0.05
0.05
V t = 2.5V
E-trim Pulse Voltage 4
Vp
11.75
12.00
12.25
11.75
12.00
12.25
V
E-trim Pulse Current 4
Pulse Frequency 4
Ip
? pulse
2
50
2
50
mA
KH Z
ALD1108E/ALD1110E
Advanced Linear Devices
4 of 14
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