参数资料
型号: ALD1108EPCL
厂商: Advanced Linear Devices Inc
文件页数: 8/14页
文件大小: 0K
描述: MOSFET N-CH ADJ QUAD 16PDIP
标准包装: 25
系列: EPAD®
FET 型: 4 N 通道(半桥)
FET 特点: 标准
漏极至源极电压(Vdss): 10V
电流 - 连续漏极(Id) @ 25° C: 3mA
开态Rds(最大)@ Id, Vgs @ 25° C: 500 欧姆 @ 5V
Id 时的 Vgs(th)(最大): 1V @ 1µA
功率 - 最大: 600mW
安装类型: 通孔
封装/外壳: 16-DIP(0.300",7.62mm)
供应商设备封装: 16-PDIP
包装: 管件
TYPICAL PERFORMANCE CHARACTERISTICS (cont.)
4
OFFSET VOLTAGE vs.
AMBIENT TEMPERATURE
600
GATE LEAKAGE CURRENT
vs. AMBIENT TEMPERATURE
3
2
1
0
REPRESENTATIVE UNITS
500
400
300
-1
-2
-3
-4
200
100
0
I GSS
-50
-25
0
25
50
75
100
125
-50
-25
0
25
50
75
100
125
5.0
AMBIENT TEMPERATURE ( ° C)
GATE SOURCE VOLTAGE
vs. ON - RESISTANCE
5
AMBIENT TEMPERATURE ( ° C)
DRAIN - GATE DIODE CONNECTED VOLTAGE
TEMPCO vs. DRAIN SOURCE ON CURRENT
D
V DS
-55 ° C ≤ T A ≤ +125 ° C
4.0
+125 ° C
V GS
I DS(ON)
2.5
3.0
2.0
1.0
+25 ° C
S
0.0V ≤ V DS ≤ 5.0V
0
-2.5
-5
0.1
1
10
100
1000
10000
1
10
100
1000
ON - RESISTANCE (K ? )
DRAIN SOURCE ON CURRENT ( μ A)
ALD1108E/ALD1110E
Advanced Linear Devices
8 of 14
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