- 您现在的位置：买卖IC网 > PDF目录366382 > AM28F010A-90JIB (Advanced Micro Devices, Inc.) 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms PDF资料下载
参数资料
| 型号： | AM28F010A-90JIB |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| 中文描述： | 1兆位（128亩× 8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法 |
| 文件页数： | 17/35页 |
| 文件大小： | 464K |
| 代理商： | AM28F010A-90JIB |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页当前第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页
Am28F010A
17
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has
exceeded the specified limits. This is a failure condi-
tion and the device may not be used again (internal
pulse count exceeded). Under these conditions DQ5
will produce a “1.” The program or erase cycle was not
successfully completed. Data# Polling is the only op-
erating function of the device under this condition. The
CE# circuit will partially power down the device under
these conditions (to approximately 2 mA). The OE#
and WE# pins will control the output disable functions
as described in the Command Definitions table in the
corresponding device data sheet.
Parallel Device Erasure
The Embedded Erase algorithm greatly simplifies par-
allel device erasure. Since the erase process is internal
to the device, a single erase command can be given to
multiple devices concurrently. By implementing a paral-
lel erase algorithm, total erase time may be minimized.
Note that the Flash memories may erase at different
rates. If this is the case, when a device is completely
erased, use a masking code to prevent further erasure
(over-erasure). The other devices will continue to erase
until verified. The masking code applied could be the
read command (00h).
Power-Up/Power-Down Sequence
The device powers-up in the Read only mode. Power
supply sequencing is not required. Note that if V
CC
≤
1.0 Volt, the voltage difference between V
PP
and V
CC
should not exceed 10.0 Volts. Also, the device has a
rise V
PP
rise time and fall time specification of 500 ns
minimum.
Reset Command
The Reset command initializes the Flash memory de-
vice to the Read mode. In addition, it also provides the
user with a safe method to abort any device operation
(including program or erase).
The Reset must be written two consecutive times after
the Setup Program command (10h or 50h). This will
reset the device to the Read mode.
Following any other Flash command, write the Reset
command once to the device. This will safely abort any
previous operation and initialize the device to the Read
mode.
The Setup Program command (10h or 50h) is the only
command that requires a two-sequence reset cycle. The
first Reset command is interpreted as program data.
However, FFh data is considered as null data during pro-
gramming operations (memory cells are only pro-
grammed from a logical “1" to “0"). The second Reset
command safely aborts the programming operation and
resets the device to the Read mode.
Memory contents are not altered in any case.
CE#
t
OEH
WE#
OE#
Data
DQ0–DQ7
DQ6 =
DQ6 =
DQ6
Stop Toggling
DQ0–DQ7
Valid
t
OE
*
16778D-11
Note:
*DQ6 stops toggling (The device has completed the Embedded operation.)
Figure 6.
AC Waveforms for Toggle Bit during Embedded Algorithm Operations
相关PDF资料 |
PDF描述 |
|---|---|
| AM28F010A-90PC | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PI | 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM28F010A-90LC | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Flash EEPROM |
| AM28F010A-90PC | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PCB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PE | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
| AM28F010A-90PEB | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms |
发布紧急采购，3分钟左右您将得到回复。