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| 型号： | AOK42S60L |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 39A TO247 |
| 标准包装： | 30 |
| 系列： | aMOS™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 39A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 99 毫欧 @ 21A，10V |
| Id 时的 Vgs(th)（最大）： | 3.8V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 40nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2154pF @ 100V |
| 功率 - 最大： | 417W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
AOK42S60
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
I DSS
I GSS
V GS(th)
R DS(ON)
V SD
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
I D =250 μ A, V GS =0V, T J =25°C
I D =250 μ A, V GS =0V, T J =150°C
V DS =600V, V GS =0V
V DS =480V, T J =150°C
V DS =0V, V GS =±30V
V DS =5V,I D =250 μ A
V GS =10V, I D =21A, T J =25°C
V GS =10V, I D =21A, T J =150°C
I S =21A,V GS =0V, T J =25°C
600
650
-
-
-
2.5
-
-
-
-
700
-
10
-
3.2
0.085
0.24
0.84
-
-
1
-
±100
3.8
0.099
0.28
-
V
μ A
n Α
V
?
?
V
I S
I SM
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
-
-
-
-
39
166
A
A
DYNAMIC PARAMETERS
C iss
C oss
C o(er)
C o(tr)
C rss
R g
Input Capacitance
Output Capacitance
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =100V, f=1MHz
V GS =0V, V DS =0 to 480V, f=1MHz
V GS =0V, V DS =100V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
-
-
-
-
-
-
2154
135
103
344
2.7
1.7
-
-
-
-
-
-
pF
pF
pF
pF
pF
?
SWITCHING PARAMETERS
Q g
Total Gate Charge
-
40
-
nC
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
I rm
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
V GS =10V, V DS =480V, I D =21A
V GS =10V, V DS =400V, I D =21A,
R G =25 ?
I F =21A,dI/dt=100A/ μ s,V DS =400V
I F =21A,dI/dt=100A/ μ s,V DS =400V
-
-
-
-
-
-
-
-
11.7
11.9
38.5
53
136
46
473
38.5
-
-
-
-
-
-
-
-
nC
nC
ns
ns
ns
ns
ns
A
Q rr
Body Diode Reverse Recovery Charge I F =21A,dI/dt=100A/ μ s,V DS =400V
-
10.5
-
μ C
A. The value of R θ JA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX) =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C, Ratings are based on low frequency and duty cycles to keep initial T J
=25°C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, I AS =6.7A, V DD =150V, Starting T J =25°C
H. C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V (BR)DSS.
I. C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V (BR)DSS.
J. Wavesoldering only allowed at leads.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Jan 2012
www.aosmd.com
Page 2 of 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AOK50B60D1 | 制造商:Alpha & Omega Semiconductor 功能描述:IGBT 600V 100A 312W TO247 |
| AOK50B60D1L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:TO247 PACKAGE MARKING DESCRIPTION |
| AOK50B65H1 | 功能描述:IGBT 650V 50A TO-247 制造商:alpha & omega semiconductor inc. 系列:Alpha IGBT?? 零件状态:在售 IGBT 类型:- 电压 - 集射极击穿（最大值）:650V 电流 - 集电极（Ic）（最大值）:100A 脉冲电流 - 集电极 (Icm):150A 不同?Vge，Ic 时的?Vce（on）:2.4V @ 15V，50A 功率 - 最大值:375W 开关能量:1.92mJ (开), 850μJ (关) 输入类型:标准 栅极电荷:76nC 25°C 时 Td（开/关）值:37ns/141ns 测试条件:400V，50A，6 欧姆，15V 反向恢复时间（trr）:261ns 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:TO-247-3 供应商器件封装:TO-247 标准包装:240 |
| AOK50B65M2 | 功能描述:IGBT 650V 50A TO247 制造商:alpha & omega semiconductor inc. 系列:Alpha IGBT?? 包装:管件 零件状态:有效 IGBT 类型:- 电压 - 集射极击穿（最大值）:650V 电流 - 集电极（Ic）（最大值）:100A 脉冲电流 - 集电极 (Icm):150A 不同?Vge，Ic 时的?Vce（on）:2.2V @ 15V，50A 功率 - 最大值:500W 开关能量:2.09mJ（开），1.03mJ（关） 输入类型:标准 栅极电荷:102nC 25°C 时 Td（开/关）值:46ns/182ns 测试条件:400V，50A，6 欧姆，15V 反向恢复时间（trr）:327ns 封装/外壳:TO-247-3 安装类型:通孔 供应商器件封装:TO-247 标准包装:240 |
| AOK53S60 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:null600V 53A ?± MOS Power Transistor |
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