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参数资料
| 型号： | AON6918 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSF 2N CH 25V 60/85A DFN5X6A |
| 标准包装： | 3,000 |
| 系列： | * |
| FET 型： | 2 N 沟道（双）非对称型 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A，85A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.2 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1560pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（5x6） |
| 包装： | 带卷 (TR) |
AON6918
Q1 Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =250 μ A, V GS =0V
25
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =25V, V GS =0V
V DS =0V, V GS = ±20V
T J =55°C
1
5
100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS I D =250 μ A
V GS =10V, V DS =5V
V GS =10V, I D =20A
T J =125°C
1.2
200
1.7
4.3
6.6
2.3
5.2
8
V
A
m ?
V GS =4.5V, I D =20A
6.2
7.8
m ?
g FS
Forward Transconductance
V DS =5V, I D =20A
70
S
V SD
Diode Forward Voltage
I S =1A,V GS =0V
0.7
1
V
I S
Maximum Body-Diode Continuous Current
30
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
1040
1300
1560
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =15V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
370
10
0.8
530
35
1.7
690
60
2.6
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
13
17
21.0
nC
Q g (4.5V) Total Gate Charge
Q gs Gate Source Charge
V GS =10V, V DS =15V, I D =20A
7.2
3.9
nC
nC
Q gd
t D(on)
Gate Drain Charge
Turn-On DelayTime
1.8
5
nC
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =15V, R L =0.75 ? ,
R GEN =3 ?
16
20
4
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =20A, dI/dt=500A/ μ s
16
21
26
ns
Q rr
Body Diode Reverse Recovery Charge I F =20A, dI/dt=500A/ μ s
31
39
47
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation P D is based on T J(MAX) =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep
initial T J =25°C.
D. The R θ JA is the sum of the thermal impedence from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Aug 2011
www.aosmd.com
Page 2 of 10
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