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| 型号： | AON7460 |
| 厂商： | Alpha & Omega Semiconductor Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOS N CH 300V 4A DFN3X3A_EP |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 300V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 830 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 380pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（3x3） |
| 包装： | 标准包装 |
| 其它名称： | 785-1313-6 |
AON7460
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
BV DSS
/ ? TJ
I DSS
I GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate-Body leakage current
I D =250 μ A, V GS =0V, T J =25°C
I D =250 μ A, V GS =0V, T J =150°C
ID=250 μ A, VGS=0V
V DS =300V, V GS =0V
V DS =240V, T J =125°C
V DS =0V, V GS =±30V
300
350
0.3
1
10
±100
V
V/ o C
μ A
n Α
V GS(th)
R DS(ON)
g FS
V SD
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V DS =5V, I D =250 μ A
V GS =10V, I D =1.2A
V DS =40V, I D =1.2A
I S =1A,V GS =0V
3.3
3.9
0.67
2
0.76
4.5
0.83
1
V
?
S
V
I S
I SM
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
4
13
A
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
240
310
380
pF
C oss
Output Capacitance
V GS =0V, V DS =25V, f=1MHz
30
45
60
pF
C rss
Reverse Transfer Capacitance
3.0
pF
R g
Gate resistance
V GS =0V, V DS =0V, f=1MHz
1.4
2.9
4.5
?
SWITCHING PARAMETERS
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =10V, V DS =240V, I D =1.2A
V GS =10V, V DS =150V, I D =1.2A,
R G =25 ?
5.4
6.8
1.9
2.0
17
8
29
12
8.2
nC
nC
nC
ns
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =1.2A,dI/dt=100A/ μ s,V DS =100V
60
88
120
ns
Q rr
Body Diode Reverse Recovery Charge I F =1.2A,dI/dt=100A/ μ s,V DS =100V
0.20
0.29
0.40
μ C
A. The value of R θ JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C. The
Power Dissipation P DSM is based on R θ JA t ≤ 10s value and the maximum allowed junction temperature of 150 ° C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on T J(MAX) =150 ° C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150 ° C. Ratings are based on low frequency and duty cycles to keep initial
T J =25 ° C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX) =150 ° C. The SOA curve provides a single pulse rating.
G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 ° C.
H. L=60mH, I AS =2.1A, V DD =150V, R G =10 , Starting T J =25 ° C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar 2011
www.aosmd.com
Page 2 of 6
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