参数资料
型号: APTCV60TLM70T3G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP3, 32 PIN
文件页数: 4/11页
文件大小: 281K
代理商: APTCV60TLM70T3G
APTCV60TLM70T3G
APT
C
V60T
LM
70T
3G
Rev
0
Mar
ch,
2009
www.microsemi.com
2- 11
Q1 & Q4 Absolute maximum ratings
Q1 & Q4 Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VGS = 0V,VDS = 600V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 39A
70
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.7mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Q1 & Q4 Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7
Coss
Output Capacitance
2.56
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.21
nF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5Ω
84
ns
Eon
Turn-on Switching Energy
670
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
1096
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
RthJC
Junction to Case Thermal Resistance
0.5
°C/W
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
39
ID
Continuous Drain Current
Tc = 80°C
29
IDM
Pulsed Drain current
160
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
70
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
250
W
IAR
Avalanche current (repetitive and non repetitive)
20
A
EAR
Repetitive Avalanche Energy
1
EAS
Single Pulse Avalanche Energy
1800
mJ
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