参数资料
型号: APTCV60TLM70T3G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP3, 32 PIN
文件页数: 6/11页
文件大小: 281K
代理商: APTCV60TLM70T3G
APTCV60TLM70T3G
APT
C
V60T
LM
70T
3G
Rev
0
Mar
ch,
2009
www.microsemi.com
4- 11
CR5 & CR6 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
25
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
1.8
2.2
IF = 60A
2.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.5
V
Tj = 25°C
25
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
35
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
480
nC
Err
Reverse Recovery Energy
IF = 30A
VR = 400V
di/dt =1000A/s
Tj = 125°C
0.6
mJ
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
CR2, CR3, CR7 & CR8 diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
100
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
2.6
3.1
IF = 60A
3.2
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.8
V
Tj = 25°C
300
trr
Reverse Recovery Time
Tj = 125°C
380
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 30A
VR = 800V
di/dt =200A/s
Tj = 125°C
1700
nC
Err
Reverse Recovery Energy
IF = 30A
VR = 800V
di/dt =1000A/s
Tj = 125°C
1.6
mJ
RthJC
Junction to Case Thermal Resistance
1.2
°C/W
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
B/B
TC=100°C
4
%
=
T
B
R
T
1
exp
25
85
/
25
T: Thermistor temperature
RT: Thermistor value at T
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