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参数资料
| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 16/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
16
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
handbook, halfpage
(mA)
0
2
4
6
VGG
=
VDS (V)
0
16
12
8
4
MGX451
(1)
(6)
(7)
(8)
(5)
(4)
(3)
(2)
Fig.24 Drain current as a function of gate 1 (V
GG
)
and drain supply voltage; typical values;
amplifier b.
V
G2-S
= 4 V; V
DS
(a) = V
(a) = 0 V; T
= 25
C;
R
G1
(b) = 150 k
(connected to V
GG
); see Fig.4.
(1) R
G1
(b) = 68 k
.
(2) R
G1
(b) = 82 k
.
(3) R
G1
(b) = 100 k
.
(4) R
G1
(b) = 120 k
.
(5) R
G1
(b) = 150 k
.
(6) R
G1
(b) = 180 k
.
(7) R
G1
(b) = 220 k
.
(8) R
G1
(b) = 270 k
.
handbook, halfpage
ID
(mA)
0
2
4
6
12
4
0
8
MGX452
VG2-S (V)
(5)
(4)
(3)
(2)
(1)
Fig.25 Drain current as a function of gate 2
voltage; typical values; amplifier b.
V
DS
(b) = 5 V; V
DS
(a) = V
(a) = 0 V; T
= 25
C;
R
G1
(b) = 150 k
(connected to V
GG
); see Fig.4.
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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