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| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 2/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
2
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
FEATURES
Two low noise gain controlled amplifiers in a single
package. One with a fully integrated bias and one with a
partly integrated bias
Internal switch reduces the number of external
components
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1205 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads
and an integrated switch. The integrated switch is
operated by the gate 1 bias of amplifier b. The source and
substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross-modulation
performance during AGC. Integrated diodes between the
gates and source protect against excessive input voltage
surges. The transistor is encapsulated in SOT363
micro-miniature plastic package.
PINNING - SOT363
PIN
DESCRIPTION
1
2
3
4
5
6
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)
handbook, halfpage
1
2
3
6
5
4
Top view
MGX429
Aa
d (a)
s
d (b)
g1 (a)
g2
g1 (b)
AMP
b
Fig.1 Simplified outline and symbol.
Marking code: L4-.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF1205
Plastic surface mounted package; 6 leads
SOT363
相关PDF资料 |
PDF描述 |
|---|---|
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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