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参数资料
| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 6/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
6
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 12 mA; note 1
Notes
1.
2.
For the MOS-FET not in use: V
G1-S
(b) = 0 V; V
DS
(b) = 0 V.
Measured in Fig.13 test circuit.
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
G
tr
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance
power gain
T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
S
= 2 mS; B
S
= B
S(opt)
;
G
L
= 0.5 mS; B
L
= B
L(opt)
f = 400 MHz; G
S
= 2 mS; B
S
= B
S(opt)
;
G
L
= 1 mS; B
L
= B
L(opt)
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S(opt)
;
G
L
= 1 mS; B
L
= B
L(opt)
f = 10.7 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1% at 0 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 2
input level for k = 1% at 10 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 2
input level for k = 1% at 40 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; note 2
26
31
31
1.8
3.3
0.75
20
35
40
2.3
39
mS
pF
pF
pF
fF
dB
27
31
35
dB
22
26
30
dB
NF
noise figure
90
4
1.1
1.2
1.7
1.9
dB
dB
dB
dB
V
X
mod
cross-modulation
90
dB
V
98
102
dB
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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