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| 型号： | BF1205 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件页数： | 4/25页 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
4
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
handbook, halfpage
(mW)
0
50
100
200
0
200
MGS359
150
150
100
50
Ts (
°
C)
Fig.2 Power derating curve.
STATIC CHARACTERISTICS
T
j
= 25
C; per MOS-FET; unless otherwise specified.
Note
1.
2.
R
G1
connects gate 1 (b) to V
GG
= 0 V (see Fig.4).
R
G1
connects gate 1 (b) to V
GG
= 5 V (see Fig.4).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
10
10
1.5
1.5
1
1.0
16
UNIT
V
(BR)DSS
drain-source breakdown voltage
amp. a: V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
amp. b: V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
amp. a: V
G2-S
= 4 V; V
DS
= 5 V;
R
G1
= 150 k
; note 1
amp. b: V
G2-S
= 4 V; V
DS
= 5 V;
R
G1
= 150 k
; note 2
amp. a: V
G1-S
= 5 V; V
G2-S
= V
DS
= 0 V
amp. b: V
G1-S
= 5 V; V
G2-S
= V
DS
= 0 V
V
G2-S
= 4 V; V
G1-S
= V
DS
= 0 V
10
7
6
6
0.5
0.5
0.3
0.4
8
V
V
V
V
V
V
V
V
mA
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
8
16
mA
I
G1-S
gate cut-off current
50
50
20
nA
nA
nA
I
G2-S
gate cut-off current
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205,135 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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