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| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 13/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
13 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(b)
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V; T
j
= 25
C.
Fig 19. Gate 1 current as a function of gate 1 voltage;
typical values.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(b)
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V; T
j
= 25
C.
Fig 20. Forward transfer admittance as a function of
drain current; typical values.
V
G1-S
(V)
0
2
1.6
0.8
1.2
0.4
001aaa570
(1)
40
60
20
80
100
I
G1
(
μ
A)
0
(2)
(4)
(6)
(7)
(3)
(5)
I
D
(mA)
0
32
24
8
16
001aaa571
(1)
(2)
20
10
30
40
y
fs
(mS)
0
(3)
(4)
(5)
(6)
(7)
V
DS(b)
= 5 V; V
G2-S
= 4 V; V
DS(a)
= V
G1-S(a)
= 0 V;
T
j
= 25
C.
V
DS(b)
= 5 V; V
G2-S
= 4 V; V
DS(a)
= V
G1-S(a)
= 0 V;
T
j
= 25
C; R
G1(b)
= 150 k
(connected to V
GG
); see
Figure 3
.
Fig 21. Drain current as a function of gate 1 current;
typical values.
Fig 22. Drain current as a function of gate 1 supply
voltage (V
GG
); typical values.
I
G1
(
μ
A)
0
50
40
20
30
10
001aaa572
8
16
24
I
D
(mA)
0
V
GG
(V)
0
5
4
2
3
1
001aaa573
8
4
12
16
I
D
(mA)
0
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| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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