- 您现在的位置：买卖IC网 > PDF目录378411 > BF1205C (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 8/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
8 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
V
DS(a)
= V
DS(b)
= V
supply
, V
G2-S
= 4 V, T
j
= 25
C,
R
G1(b)
= 150 k
(connected to ground); see
Figure 3
.
(1) V
DS(b)
= 5 V.
(2) V
DS(b)
= 4.5 V.
(3) V
DS(b)
= 4 V.
(4) V
DS(b)
= 3.5 V.
(5) V
DS(b)
= 3 V.
(6) V
DS(b)
= 2.5 V.
V
DS(a)
= 5 V; V
G1-S(b)
= 0 V; gate 1 (a) = open;
T
j
= 25
C.
Fig 9.
Drain current as a function of gate 2 and drain
supply voltage; typical values.
Fig 8.
Drain current of amplifier a as a function of
supply voltage of a and b amplifier; typical
values.
V
sup
(V)
0
5
4
2
3
1
001aaa558
8
12
4
16
20
I
D
(mA)
0
001aaa559
V
G2-S
(V)
0
6
4
2
16
8
24
32
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
V
DS(a)
= V
DS(b)
= 5 V; V
G1-S(b)
= 0 V; f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C; see
Figure 33
.
Fig 10. Unwanted voltage for 1 % cross-modulation as
a function of gain reduction; typical values.
V
DS(a)
= V
DS(b)
= 5 V; V
G1-S(b)
= 0 V; f = 50 MHz; see
Figure 33
.
Fig 11. Gain reduction as a function of AGC voltage;
typical values.
gain reduction (dB)
0
50
40
20
30
10
001aaa560
100
90
110
120
V
unw
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aaa561
30
20
40
10
0
gain
reduction
(dB)
50
相关PDF资料 |
PDF描述 |
|---|---|
| BF1205C | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
发布紧急采购，3分钟左右您将得到回复。