- 您现在的位置：买卖IC网 > PDF目录378411 > BF1205C (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 7/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
7 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
V
DS(a)
= 5 V; V
G1-S(b)
= V
DS(b)
= 0 V; T
j
= 25
C.
Fig 6.
Forward transfer admittance as a function of
drain current; typical values.
V
DS(a)
= 5 V; V
G2-S
= 4 V; V
DS(b)
= 5 V; V
G1-S(b)
= 0 V;
T
j
= 25
C.
Fig 7.
Drain current as a function of internal G1
current (current in pin drain (b) if MOS-FET (b)
is switched off); typical values.
I
D
(mA)
0
32
24
8
16
001aaa556
20
10
30
40
y
fs
(mS)
0
(1)
(2)
(3)
(4)
(5)
(6)
001aaa557
I
D
(b) (
μ
A)
0
60
40
20
8
12
4
16
20
I
D
(a)
(mA)
0
相关PDF资料 |
PDF描述 |
|---|---|
| BF1205C | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
发布紧急采购，3分钟左右您将得到回复。