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| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 5/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
5 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
8. Dynamic characteristics
8.1 Dynamic characteristics for amplifier a
(1) I
D(b)
; R
G1
= 120 k
.
(2) I
D(b)
; R
G1
= 150 k
.
(3) I
D(b)
; R
G1
= 180 k
.
(4) I
D(a)
; R
G1
= 180 k
.
(5) I
D(a)
; R
G1
= 150 k
.
(6) I
D(a)
; R
G1
= 120 k
.
Fig 2.
Drain currents of MOS-FET a and b as function
of V
GG
.
V
GG
= 5 V: amplifier a is off; amplifier b is on
V
GG
= 0 V: amplifier a is on; amplifier b is off.
Fig 3.
Functional diagram.
001aaa552
8
12
4
16
20
I
D
(mA)
0
V
GG
(V)
0
5
4
2
3
1
(2)
(5)
(4)
(6)
(3)
(1)
001aaa553
RG1
V
GG
G1 (B)
G2
G1 (A)
D (B)
S
D (A)
Table 8.
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA.
Symbol
Parameter
y
fs
forward transfer admittance
C
ig1-ss
input capacitance at gate 1
C
ig2-ss
input capacitance at gate 2
C
oss
output capacitance
C
rss
reverse transfer capacitance
G
tr
power gain
Dynamic characteristics for amplifier a
[1]
Conditions
T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
Min
26
-
-
-
-
Typ
31
2.2
3.0
0.9
20
Max
41
2.7
-
-
-
Unit
mS
pF
pF
pF
fF
31
26
21
-
-
-
35
30
25
3.0
1.3
1.4
39
34
29
-
1.9
2.1
dB
dB
dB
dB
dB
dB
NF
noise figure
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