- 您现在的位置：买卖IC网 > PDF目录378411 > BF1205C (NXP Semiconductors N.V.) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 3/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
3 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
3. Ordering information
Table 3.
Type number
4. Marking
Table 4.
Type number
BF1205C
[1]
* = p or -: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per MOS-FET
V
DS
drain-source voltage
I
D
drain current (DC)
I
G1
gate 1 current
I
G2
gate 2 current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the source lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-s)
Ordering information
Package
Name
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
BF1205C
Marking
Marking code
[1]
M6*
Limiting values
Conditions
Min
Max
Unit
-
-
-
-
6
30
10
10
180
+150
150
V
mA
mA
mA
mW
C
C
T
sp
107
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
240
Unit
K/W
相关PDF资料 |
PDF描述 |
|---|---|
| BF1205C | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1205 | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
| BF1206F | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1205C,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
发布紧急采购，3分钟左右您将得到回复。