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| 型号： | BF1205C |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1205C<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 6/23页 |
| 文件大小： | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
6 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
[1]
For the MOS-FET not in use: V
G1-S(b)
= 0 V; V
DS(b)
= 0 V.
Measured in
Figure 33
test circuit.
[2]
8.1.1
Graphs for amplifier a
X
mod
cross-modulation
input level for k = 1 %; f
w
= 50 MHz; f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
[2]
90
-
-
100
-
90
99
105
-
-
-
-
dB
V
dB
V
dB
V
dB
V
Table 8.
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA.
Symbol
Parameter
Dynamic characteristics for amplifier a
[1]
…continued
Conditions
Min
Typ
Max
Unit
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(a)
= 5 V; V
G1-S(b)
= V
DS(b)
= 0 V; T
j
= 25
C.
(1) V
G1-S(a)
= 1.8 V.
(2) V
G1-S(a)
= 1.7 V.
(3) V
G1-S(a)
= 1.6 V.
(4) V
G1-S(a)
= 1.5 V.
(5) V
G1-S(a)
= 1.4 V.
(6) V
G1-S(a)
= 1.3 V.
(7) V
G1-S(a)
= 1.2 V.
(8) V
G1-S(a)
= 1.1 V.
(9) V
G1-S(a)
= 1 V.
V
G2-S
= 4 V; V
G1-S(b)
= V
DS(b)
= 0 V; T
j
= 25
C.
Fig 5.
Output characteristics; typical values.
Fig 4.
Transfer characteristics; typical values.
V
G1-S
(V)
0
2
1.6
0.8
1.2
0.4
001aaa554
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(7)
(6)
001aaa555
V
DS
(V)
0
6
4
2
16
8
24
32
I
D
(mA)
0
(2)
(3)
(4)
(6)
(7)
(9)
(8)
(5)
(1)
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| BF1205C T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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