参数资料
| 型号： | BR93L56RF-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 37/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 8SOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (128 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L56RF-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
● Cautions on use
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics and fluctuations of external parts and our IC.
(3) Absolute Maximum Ratings
If the absolute maximum ratings such as impressed voltage and action temperature range and so forth are exceeded, IC
may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear
exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to IC.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is not lower than that
of GND terminal in consideration of transition status.
(5) Heat design
In consideration of allowable loss in actual use condition, carry out heat design with sufficient margin.
(6) Terminal to terminal shortcircuit and wrong packaging
When to package IC onto a board, pay sufficient attention to IC direction and displacement. Wrong packaging may
destruct IC. And in the case of shortcircuit between IC terminals and terminals and power source, terminal and GND
owing to foreign matter, IC may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
37/40
2011.09 - Rev.G
相关PDF资料 |
PDF描述 |
|---|---|
| AGLN125V2-ZCSG81 | IC FPGA NANO 1KB 125K 81-CSP |
| A3PN250-VQ100 | IC FPGA NANO 250K GATES 100-VQFP |
| BR93L46RFJ-WE2 | IC EEPROM 1KBIT 2MHZ 8SOP |
| A3PN250-ZVQG100 | IC FPGA NANO 250K GATES 100-VQFP |
| A3PN250-ZVQ100 | IC FPGA NANO 250K GATES 100-VQFP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L56-W | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| BR93L66 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
| BR93L66F | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
| BR93L66FJ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:EEPROM |
| BR93L66FJ-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 4Kbit(256 x 16bit) EEPROM |
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