参数资料
型号: CY7C1177V18-333BZXC
厂商: CYPRESS SEMICONDUCTOR CORP
元件分类: SRAM
英文描述: 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
中文描述: 2M X 9 DDR SRAM, 0.45 ns, PBGA165
封装: 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件页数: 11/27页
文件大小: 648K
代理商: CY7C1177V18-333BZXC
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
Document Number: 001-06620 Rev. *D
Page 19 of 27
Power Up Sequence in DDR-II+ SRAM
DDR-II+ SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations. During
power up, when the DOFF is tied HIGH, the DLL gets locked after
2048 cycles of stable clock.
Power Up Sequence
Apply power with DOFF tied HIGH (all other inputs can be HIGH
or LOW)
Apply VDD before VDDQ
Apply VDDQ before VREF or at the same time as VREF
Provide stable power and clock (K, K) for 2048 cycles to lock
the DLL.
DLL Constraints
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
The DLL functions at frequencies down to 120 MHz.
If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 2048 cycles stable clock
to relock to the desired clock frequency.
Power Up Waveforms
Figure 5. Power Up Waveforms
K
Fix HIGH (tie to VDDQ)
VDD/VDDQ
DOFF
Clock Start (Clock Starts after VDD/VDDQ is Stable)
Unstable Clock
> 2048 Stable Clock
Start Normal
Operation
~ ~
VDD/VDDQ Stable (< + 0.1V DC per 50 ns)
相关PDF资料
PDF描述
CY7C1177V18-333BZXI 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1170V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1177V18 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1215H-100AXC 1-Mbit (32K x 32) Pipelined Sync SRAM
CY7C1215H-100AXI 1-Mbit (32K x 32) Pipelined Sync SRAM
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