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参数资料
| 型号： | CY7C1177V18-333BZXC |
| 厂商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分类： | SRAM |
| 英文描述： | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| 中文描述： | 2M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件页数： | 9/27页 |
| 文件大小： | 648K |
| 代理商： | CY7C1177V18-333BZXC |
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CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
Document Number: 001-06620 Rev. *D
Page 17 of 27
Identification Register Definitions
Instruction Field
Value
Description
CY7C1166V18
CY7C1177V18
CY7C1168V18
CY7C1170V18
Revision Number
(31:29)
000
Version number.
Cypress Device ID
(28:12)
11010111000000101
11010111000001101
11010111000010101
11010111000100101 Defines the type of
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
Allows unique
identification of
SRAM vendor.
ID Register
Presence (0)
1
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input Output contents. It places the boundary scan register between
TDI and TDO. This forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input output ring contents. It places the boundary scan register between
TDI and TDO. This operation does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
相关PDF资料 |
PDF描述 |
|---|---|
| CY7C1177V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1170V18 | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1177V18 | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) |
| CY7C1215H-100AXC | 1-Mbit (32K x 32) Pipelined Sync SRAM |
| CY7C1215H-100AXI | 1-Mbit (32K x 32) Pipelined Sync SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| CY7C1214F-100AC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1214F-100ACT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1215F-166AC | 制造商:Rochester Electronics LLC 功能描述:1MB (32K X 32) 3.3V PIPELINE SCD - Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY7C1215H-166AXC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC SGL 3.3V 1MBIT 32KX32 3.5NS 100TQFP - Bulk |
| CY7C1217H-133AXC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC QUAD 3.3V 1.125MBIT 32KX36 7.5NS 100TQFP - Bulk |
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