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| 型号： | DS28E04S-100+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/37页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 4KBIT 16SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 4K (256 x 16) |
| 接口： | 1 线 串行 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
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DS28E04-100: 4096-Bit 1-Wire Addressable EEPROM with PIO
t SLOT
Reset Low Time (Note 1)
t RSTL
t PDH
Presence-Detect Fall Time
(Notes 3, 18)
Presence-Detect Low
Time
Presence-Detect Sample
Time (Note 1)
t W0L
t W1L
t RL
t MSR
N CY
t DR
At +85°C (worst case)
PARAMETER SYMBOL CONDITIONS
Time Slot Duration Standard speed
(Note 1) Overdrive speed
IO PIN, 1-Wire RESET, PRESENCE DETECT CYCLE
Standard speed, V PUP > 4.5V
Standard speed (Note 17)
Overdrive speed, V PUP > 4.5V
Overdrive speed (Note 17)
Presence-Detect High Standard speed
Time Overdrive speed (Note 17)
Standard speed, V PUP > 4.5V
t FPD Standard speed
Overdrive speed
Standard speed
t PDL Overdrive speed, V PUP > 4.5V
Overdrive speed (Note 17)
Standard speed, V PUP > 4.5V
t MSP Standard speed
Overdrive speed
IO PIN, 1-Wire WRITE
Write-0 Low Time Standard speed
(Notes 1, 19) Overdrive speed (Note 17)
Write-1 Low Time Standard speed
(Notes 1, 19) Overdrive speed
IO PIN, 1-Wire READ
Read Low Time Standard speed
(Notes 1, 20) Overdrive speed
Read Sample Time Standard speed
(Notes 1, 20) Overdrive speed
EEPROM
Programming Current I PROG (Note 21)
Programming Time t PROG (Note 22)
Write/Erase Cycles At +25°C
(Endurance) (Note 23) At +85°C (worst case)
Data Retention
(Notes 23, 24)
MIN
65
9
480
504
48
53
15
2
1.10
1.1
0
60
8
8
64
67
8.1
60
7
5
1
5
1
t RL + δ
t RL + δ
200k
50k
40
TYP
MAX
640
640
80
80
60
7
3.75
7.0
1.1
240
24
26
75
75
10
120
16
15
2
15 - δ
2- δ
15
2
1
10
UNITS
μs
μs
μs
μs
μs
μs
μs
μs
μs
μs
mA
ms
?
years
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
Note 11:
Note 12:
Note 13:
Note 14:
Note 15:
Note 16:
Note 17:
Note 18:
System requirement.
Maximum instantaneous pulldown current through all pins combined.
Guaranteed by design, simulation only. Not production tested.
This load current is caused by the internal weak pullup, which asserts a logical 1 to address pins that are not connected. The
logical state of the address pins must not change during the execution of ROM function commands during those time slots in
which these bits are relevant.
The I-V characteristic is linear for voltages less than 1V.
Width of the narrowest pulse that trips the activity latch. Back to back pulses that are active for < t PWMIN (max) and that have an
intermediate inactive time < t PWMIN (max) are not guaranteed to be filtered.
The Pulse function requires that V CC power is available; otherwise the command will not be executed.
Maximum allowable pullup resistance is a function of the number of 1-Wire devices in the system and 1-Wire recovery times. The
specified value here applies to systems with only one device and with the minimum 1-Wire recovery times. For more heavily
loaded systems, an active pullup such as that found in the DS2482-x00, DS2480B, or DS2490 may be required.
Capacitance on the data pin could be 800pF when V PUP is first applied. If a 2.2k ? resistor is used to pull up the data line, 2.5μs
after V PUP has been applied the parasite capacitance will not affect normal communications.
V TL , V TH , and V HY are a function of the internal supply voltage, which in parasite power mode, is a function of V PUP and the 1-Wire
recovery times. The V TH and V TL maximum specifications are valid at V CC = V PUP = 5.25V. In any case, V TL < V TH < V PUP .
Voltage below which, during a falling edge on IO, a logic 0 is detected.
The voltage on IO needs to be less than or equal to V ILMAX whenever the master drives the line low.
Voltage above which, during a rising edge on IO, a logic 1 is detected.
After V TH is crossed during a rising edge on IO, the voltage on IO has to drop by at least V HY to be detected as logic '0'.
Applies to a single DS28E04-100 without V CC supply, attached to a 1-Wire line.
The earliest recognition of a negative edge is possible at t REH after V TH has been previously reached.
Highlighted numbers are NOT in compliance with legacy 1-Wire product standards. See comparison table.
Interval during the negative edge on IO at the beginning of a Presence Detect pulse between the time at which the voltage is
80% of V PUP and the time at which the voltage is 20% of V PUP .
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相关代理商/技术参数 |
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| DS28E04S-224-BB+T | 制造商:Maxim Integrated Products 功能描述:- Tape and Reel |
| DS28E05P+ | 功能描述:电可擦除可编程只读存储器 1W 1KB FTP MEMORY TSOC RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS28E05P+T | 功能描述:电可擦除可编程只读存储器 1W 1KB FTP MEMORY TSOC RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS28E05R+T | 功能描述:电可擦除可编程只读存储器 1-Wire 112-BYTE 电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS28E10 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1-Wire SHA-1 Authenticator Irreversible Write Protection |
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