参数资料
型号: ECH8410-TL-H
厂商: ON Semiconductor
文件页数: 7/7页
文件大小: 0K
描述: MOSFET N-CH 30V 12A ECH8
标准包装: 3,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 6A,10V
闸电荷(Qg) @ Vgs: 31nC @ 10V
输入电容 (Ciss) @ Vds: 1700pF @ 10V
功率 - 最大: 1.6W
安装类型: 表面贴装
封装/外壳: 8-SMD,扁平引线
供应商设备封装: 8-ECH
包装: 带卷 (TR)
ECH8410
Note on usage : Since the ECH8410 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1331-7/7
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