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| 型号： | FDD5353 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 11.5A DPAK |
| 产品目录绘图： | DPAK, TO-252(AA) |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12.3 毫欧 @ 10.7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 65nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3215pF @ 30V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252 |
| 包装： | 标准包装 |
| 产品目录页面： | 1606 (CN2011-ZH PDF) |
| 其它名称： | FDD5353DKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
Δ BV DS S
Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 μ A, V GS = 0V
I D = 250 μ A, referenced to 25°C
V GS = 0V, V DS = 48V,
V GS = ±20V, V DS = 0V
60
77
1
±100
V
mV/°C
μ A
nA
On Characteristics
V GS(th)
Δ V GS(th)
Δ T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 μ A
I D = 250 μ A, referenced to 25°C
1.0
1.8
-8
3.0
V
mV/°C
V GS = 10V, I D = 10.7A
10.1
12.3
r DS(on)
Static Drain to Source On Resistance
V GS = 4.5V, I D = 9.5A
12.1
15.4
m Ω
V GS = 10V, I D = 10.7A, T J = 125°C
16.7
20.3
g FS
Forward Transconductance
V DD = 5V, I D = 10.7A
41
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 30V, V GS = 0V,
f = 1MHz
f = 1MHz
2420
215
120
1.7
3215
285
180
pF
pF
pF
Ω
Switching Characteristics
t d(on)
Turn-On Delay Time
11
20
ns
t r
t d(off)
t f
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 30V, I D = 10.7A,
V GS = 10V, R GEN = 6 Ω
6
36
4
11
58
10
ns
ns
ns
Q g
Q g
Q gs
Total Gate Charge
Total Gate Charge
Gate to Source Charge
V GS = 0V to 10V
V GS = 0V to 4.5V
V DD = 30V,
I D = 10.7A
46
23
7
65
32
nC
nC
nC
Q gd
Gate to Drain “Miller” Charge
9
nC
Drain-Source Diode Characteristics
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 10.7A
V GS = 0V, I S = 2.6A
(Note 2)
(Note 2)
0.8
0.7
1.3
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 10.7A, di/dt = 100A/ μ s
28
21
45
34
ns
nC
Notes :
1: R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R θ JC is guaranteed by design while R θ JA is determined by the user’s board design.
a) 40°C/W when mounted on a
1 in 2 pad of 2 oz copper
b) 96°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300 μ s, Duty cycle < 2.0%.
3: E AS of 253mJ is based on starting T J = 25 ° C, L = 3mH, I AS = 13A, V DD = 60V, V GS = 10V. 100% test at L = 0.1mH, I AS = 41A.
?2013 Fairchild Semiconductor Corporation
FDD5353 Rev.C1
2
www.fairchildsemi.com
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