参数资料
型号: FDD8444L_F085
厂商: Fairchild Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 40V 50A DPAK
产品变化通告: Product Obsolescence 13/Aug/2010
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 50A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.2 毫欧 @ 50A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 60nC @ 5V
输入电容 (Ciss) @ Vds: 5530pF @ 25V
功率 - 最大: 153W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 标准包装
其它名称: FDD8444L_F085DKR
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
40
±20
Units
V
V
I D
Drain Current Continuous (T C < 150°C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 52 o C/W)
(Note 1)
50
16
A
Pulsed
See Figure 4
E AS
P D
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25 o C
(Note 2)
295
153
1.02
mJ
W
W/ o C
T J , T STG Operating and Storage Temperature
Thermal Characteristics
-55 to +175
o C
Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area
R θ JC
R θ JA
Thermal Resistance, Junction to Case
2
0.98
52
o
o
C/W
C/W
Package Marking and Ordering Information
Device Marking
FDD8444L
Device
FDD8444L_F085
Package
TO-252AA
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
40
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 32V,
V GS = 0V
V GS = ±20V
T J = 150 o C
-
-
-
-
-
-
1
250
±100
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
1
1.8
3
V
I D = 50A, V GS = 10V
-
3.5
5.2
r DS(on)
Drain to Source On Resistance
I D = 50A, V GS = 5V
I D = 50A, V GS = 4.5V
-
-
3.8
4.0
6.0
6.5
m ?
I D = 50A, V GS = 5V,
T J = 175 o C
-
6.8
10.7
Dynamic Characteristics
C iss
C oss
C rss
R G
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 5V
V DS = 25V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0 to 5V
-
-
-
-
-
5530
605
400
1.7
46
-
-
-
-
60
pF
pF
pF
?
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
V GS = 0 to 2V
V DD = 20V
I D = 50A
I g = 1.0mA
-
-
-
-
5.4
16.3
10.9
21
7
-
-
-
nC
nC
nC
nC
FDD8444L_F085 Rev A (W)
2
www.fairchildsemi.com
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