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参数资料
| 型号： | FDD8444L_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 50A DPAK |
| 产品变化通告： | Product Obsolescence 13/Aug/2010 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 50A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.2 毫欧 @ 50A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 5530pF @ 25V |
| 功率 - 最大： | 153W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | FDD8444L_F085DKR |
Typical Characteristics
1000
100
10us
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100us
10
LIMITED
BY PACKAGE
10
o
STARTING T J = 25 C
STARTING T J = 150 C
1
OPERATION IN THIS
SINGLE PULSE
1ms
o
10ms
TJ = MAX RATED
LIMITED BY rDS(on)
TC = 25 C
0.1
1
AREA MAY BE
o
DC
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
100
1
0.01
0.1
1 10 100
t AV , TIME IN AVALANCHE (ms)
1000
Figure 5. Forward Bias Safe Operating Area
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
T J = 175 C
100
80
60
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 5V
o
200
150
V GS = 10V PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 5V
V GS = 3.5V
V GS = 4V
40
T J = 25 o C
100
20
T J = -55 o C
50
V GS = 3V
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0
1
2
3
4
5
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
30
25
I D = 50A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.8
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
20
15
1.4
1.2
10
T J = 175 o C
1.0
5
0.8
I D = 50A
0
3
T J = 25 o C
4 5 6 7 8 9
V GS , GATE TO SOURCE VOLTAGE ( V )
10
0.6
-80
V GS = 10V
-40 0 40 80 120 160
T J , JUNCTION TEMPERATURE ( o C )
200
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDD8444L_F085 Rev A (W)
5
www.fairchildsemi.com
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