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参数资料
| 型号： | FDFMA2P029Z |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3.1A 2X2MLP |
| 产品目录绘图： | MicorFET 2x2, SC-75 Dual |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 720pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDFMA2P029ZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = –250 P A, V GS = 0V
I D = –250 P A, referenced to 25°C
V DS = –16V, V GS = 0V
V GS = ±12V, V DS = 0V
–20
–12
–1
±10
V
mV/° C
P A
P A
On Characteristics
V GS(th)
' V GS(th)
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = –250 P A
I D = –250 P A, referenced to 25°C
–0.6
–1.0
4
–1.5
V
mV/°C
V GS = –4.5V, I D = –3.1A
60
95
r DS(on)
Static Drain to Source On-Resistance
V GS = –2.5V, I D = –2.5A
88
141
m :
V GS = –4.5V, I D = –3.1A,T J =125°C
87
140
g FS
Forward Transconductance
V DS = –10V, I D = –3.1A
–11
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –10V, V GS = 0V,
f = 1MHz
540
120
100
720
160
150
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V DD = –10V, I D = –1A
V GS = –4.5V, R GEN = 6 :
V DD = –10V, I D = –3.1A
V GS = –4.5V
13
11
37
36
7
1.1
2.4
24
20
59
58
10
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
–1.1
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = –1.1A
(Note 2)
–0.8
–1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = –3.1A, di/dt = 100A/ P s
25
9
ns
nC
Schottky Diode Characteristics
V R
Reverse Voltage
I R = 1mA
T J = 25°C
20
V
I R
V F
Reverse Leakage
Forward Voltage
V R = 20V
I F = 500mA
I F = 1A
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
30
10
0.32
0.21
0.37
0.28
300
45
0.37
0.26
0.435
0.33
P A
mA
V
FDFMA2P029Z Rev. B1
2
www.fairchildsemi.co m
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| FDFMA2P029Z_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m |
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| FDFMA2P853_06 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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| FDFMA2P853T | 功能描述:MOSFET MOSFET/Schottky -20V Int. PCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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