参数资料
型号: FDH3632
厂商: Fairchild Semiconductor
文件页数: 10/14页
文件大小: 0K
描述: MOSFET N-CH 100V 80A TO-247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
标准包装: 150
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 110nC @ 10V
输入电容 (Ciss) @ Vds: 6000pF @ 25V
功率 - 最大: 310W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
其它名称: FDH3632-ND
FDH3632FS
SPICE Thermal Model
REV May 2002
FDB3632
CTHERM1 TH 6 7.5e-3
CTHERM2 6 5 8.0e-3
th
JUNCTION
CTHERM3 5 4 9.0e-3
RTHERM1
CTHERM1
CTHERM4 4 3 2.4e-2
CTHERM5 3 2 3.4e-2
CTHERM6 2 TL 6.5e-2
6
RTHERM1 TH 6 3.1e-4
RTHERM2 6 5 2.5e-3
RTHERM3 5 4 2.2e-2
RTHERM4 4 3 8.1e-2
RTHERM2
CTHERM2
RTHERM5 3 2 1.35e-1
RTHERM6 2 TL 1.5e-1
5
SABER Thermal Model
SABER thermal model FDB3632
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =7.5e-3
ctherm.ctherm2 6 5 =8.0e-3
ctherm.ctherm3 5 4 =9.0e-3
ctherm.ctherm4 4 3 =2.4e-2
ctherm.ctherm5 3 2 =3.4e-2
ctherm.ctherm6 2 tl =6.5e-2
rtherm.rtherm1 th 6 =3.1e-4
rtherm.rtherm2 6 5 =2.5e-3
rtherm.rtherm3 5 4 =2.2e-2
rtherm.rtherm4 4 3 =8.1e-2
rtherm.rtherm5 3 2 =1.35e-1
rtherm.rtherm6 2 tl =1.5e-1
RTHERM3
RTHERM4
RTHERM5
4
3
CTHERM3
CTHERM4
CTHERM5
}
2
RTHERM6
tl
CASE
CTHERM6
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
10
www.fairchildsemi.com
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