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参数资料
| 型号： | FDH3632 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 80A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FDH3632-ND FDH3632FS |
Package Marking and Ordering Information
Device Marking
FDB3632
FDP3632
FDH3632
Device
FDB3632
FDP3632
FDH3632
Package
D 2 -PAK
TO-220
TO- 247
Reel Size
330 mm
Tube
Tube
Tape Width
24 mm
N/A
N/A
Quantity
800 units
50 units
3 0 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
100
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 80V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
Gate to Source Threshold Voltage
V GS = V DS , I D = 250 μ A
2
-
4
V
I D =80A, V GS =10V
-
0.0075
0.009
r DS(ON)
Drain to Source On Resistance
I D =40A, V GS = 6V,
-
0.009
0.015
?
I D =80A, V GS =10V, T C =175 o C
-
0.018
0.022
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
6000
820
200
84
-
-
-
110
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 50V
I D = 80A
I g = 1.0mA
-
-
-
-
11
30
20
20
14
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
Turn-On Time
Turn-On Delay Time
-
-
-
30
102
-
ns
ns
t r
t d(OFF)
t f
t OFF
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 50V, I D = 80A
V GS = 10V, R GS = 3.6 ?
-
-
-
-
39
96
46
-
-
-
-
213
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I SD = 80A
I SD = 40A
I SD = 75A, dI SD /dt= 100A/ μ s
I SD = 75A, dI SD /dt= 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
64
120
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.12mH, I AS = 75A, V DD = 80V.
2: Pulse Width = 100s
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
2
www.fairchildsemi.com
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相关代理商/技术参数 |
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|---|---|
| FDH3632 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 80A, TO-247 |
| FDH400 | 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:RECT DIODE 0.2A150V DO35; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns ;RoHS Compliant: Yes |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:SIGNAL DIODE 制造商:Fairchild Semiconductor Corporation 功能描述:SMALL SIGNAL DIODE 200V 200mA DO-35 |
| FDH400_97 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:High Voltage General Purpose Diode |
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