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| 型号： | FDH3632 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/14页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 80A TO-247 |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Lead Frame Change 20/Dec/2007 |
| 标准包装： | 150 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 80A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9 毫欧 @ 80A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 110nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 6000pF @ 25V |
| 功率 - 最大： | 310W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247 |
| 包装： | 管件 |
| 其它名称： | FDH3632-ND FDH3632FS |
Typical Characteristics T C = 25°C unless otherwise noted
400
100
10 μ s
200
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
OPERATION IN THIS
STARTING T J = 25 o C
10
AREA MAY BE
LIMITED BY r DS(ON)
1ms
1
10ms
STARTING T J = 150 o C
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
DC
10
1
10
100
200
0.01
0.1
1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
150
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
V GS = 6V
V GS = 10V
120
90
60
V DD = 15V
T J = 175 o C
120
90
60
V GS = 5.5V
V GS = 5V
T J = 25 o C
30
T J = -55 o C
30
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0
3.0
3.5
4.0 4.5 5.0 5.5
6.0
0
1 2
3
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
10
9
8
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 6V
2.5
2.0
1.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = 10V
7
6
1.0
0.5
V GS = 10V, I D =80A
0
2 0
40
6 2
80
-80
-40
0 40 80 120
160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
4
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDH3632 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 100V, 80A, TO-247 |
| FDH400 | 功能描述:整流器 High Voltage General Purpose RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:RECT DIODE 0.2A150V DO35; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:150V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:50ns ;RoHS Compliant: Yes |
| FDH400 | 制造商:Fairchild Semiconductor Corporation 功能描述:SIGNAL DIODE 制造商:Fairchild Semiconductor Corporation 功能描述:SMALL SIGNAL DIODE 200V 200mA DO-35 |
| FDH400_97 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:High Voltage General Purpose Diode |
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