参数资料
型号: FDH3632
厂商: Fairchild Semiconductor
文件页数: 6/14页
文件大小: 0K
描述: MOSFET N-CH 100V 80A TO-247
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Lead Frame Change 20/Dec/2007
标准包装: 150
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 80A
开态Rds(最大)@ Id, Vgs @ 25° C: 9 毫欧 @ 80A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 110nC @ 10V
输入电容 (Ciss) @ Vds: 6000pF @ 25V
功率 - 最大: 310W
安装类型: 通孔
封装/外壳: TO-247-3
供应商设备封装: TO-247
包装: 管件
其它名称: FDH3632-ND
FDH3632FS
Test Circuits and Waveforms
V DS
BV DSS
L
t P
V DS
VARY t P TO OBTAIN
REQUIRED PEAK I AS
R G
+
V DD
I AS
V DD
V GS
DUT
-
0V
t P
I AS
0.01 ?
0
t AV
Figure 15. Unclamped Energy Test Circuit
V DS
Figure 16. Unclamped Energy Waveforms
V DD
Q g(TOT)
V GS
L
+
V DD
Q gs2
V DS
V GS
V GS = 10V
-
DUT
I g(REF)
V GS = 2V
0
Q g(TH)
I g(REF)
0
Q gs
Q gd
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveforms
V DS
R L
V DS
t ON
t d(ON)
90%
t r
t OFF
t d(OFF)
t f
90%
V GS
+
-
V DD
0
10%
10%
R GS
DUT
90%
V GS
50%
50%
V GS
0
10%
PULSE WIDTH
Figure 19. Switching Time Test Circuit
Figure 20. Switching Time Waveforms
? 200 4 Fairchild Semiconductor Corporation
FDH3632 / FDP3632 / FDB3632 Rev. C 5
6
www.fairchildsemi.com
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