参数资料
型号: FDI3652
厂商: Fairchild Semiconductor
文件页数: 4/13页
文件大小: 0K
描述: MOSFET N-CH 100V 61A TO-262AA
标准包装: 400
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 100V
电流 - 连续漏极(Id) @ 25° C: 61A
开态Rds(最大)@ Id, Vgs @ 25° C: 16 毫欧 @ 61A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 53nC @ 10V
输入电容 (Ciss) @ Vds: 2880pF @ 25V
功率 - 最大: 150W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: TO-262AA
包装: 管件
Typical Characteristics T C = 25°C unless otherwise noted
1000
100
10 μ s
500
100
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ? 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
100 μ s
STARTING T J = 25 o C
10
OPERATION IN THIS
1
AREA MAY BE
LIMITED BY r DS(ON)
1ms
10
0.1
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
10ms
DC
1
STARTING T J = 150 o C
1
10
100
200
0.01
0.1
1
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
125
PULSE DURATION = 80 μ s
125
100
DUTY CYCLE = 0.5% MAX
V DD = 15V
100
V GS = 10V
V GS = 7V
V GS = 6V
75
T J = 175 o C
75
50
50
T C = 25 o C
T J =
25 o C
T J =
-55 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
25
0
25
0
V GS = 5V
3
4 5
6
0
1
20
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
3.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
2.5
18
16
V GS = 6V
2.0
1.5
1.0
14
12
V GS = 10V
0.5
0
V GS = 10V, I D = 61A
0
20
4 0
60
-80
-40
0 40 80 120 160
200
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
? 2003 Fairchild Semiconductor Corporation
FDP3652 / FDB3652 Rev. C0
4
www.fairchildsemi.com
相关PDF资料
PDF描述
FDI8441_F085 MOSFET N-CH 40V 26A TO-262AB
FDI8441 MOSFET N-CH 40V 80A TO-262AB
FDL100N50F MOSFET N-CH 500V 100A TO-264
FDM3622 MOSFET N-CH 100V 4.4A POWER33
FDMA1023PZ MOSFET P-CHAN DUAL MICROFET2X2
相关代理商/技术参数
参数描述
FDI40KIT 838362 功能描述:SOFTWARE TOOL KIT FDI40KIT BDL RoHS:否 类别:编程器,开发系统 >> 过时/停产零件编号 系列:- 标准包装:1 系列:- 传感器类型:CMOS 成像,彩色(RGB) 传感范围:WVGA 接口:I²C 灵敏度:60 fps 电源电压:5.7 V ~ 6.3 V 嵌入式:否 已供物品:成像器板 已用 IC / 零件:KAC-00401 相关产品:4H2099-ND - SENSOR IMAGE WVGA COLOR 48-PQFP4H2094-ND - SENSOR IMAGE WVGA MONO 48-PQFP
FDI42AN15A0 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 35A I(D) | TO-262AA
FDI8441 功能描述:MOSFET 40V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDI8441_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 40V, 80A, 2.7m??
FDI8441_F085 功能描述:MOSFET 40V NCH PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube