参数资料
型号: FDMA291P
厂商: Fairchild Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET P-CH 20V 6.6A MFET 2X2
产品培训模块: High Voltage Switches for Power Processing
产品目录绘图: MicroFET 2x2, SC-75 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 42 毫欧 @ 6.6A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 14nC @ 4.5V
输入电容 (Ciss) @ Vds: 1000pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMA291PDKR
Typical Characteristics
24
2.6
20
V GS = -4.5V
-3.0V
-2.5V
2.4
V GS = -1.8V
2.2
16
-4.0V
-3.5V
2
12
-2.0V
1.8
1.6
-2.0V
8
-1.8V
1.4
-2.5V
-3.0V
4
1.2
-3.5V
-4.0V
-4.5V
1
0
0.8
0
1
2 3 4
5
0
4
8 12 16
20
24
T A = 125 C
1.6
1.4
1.2
1
0.8
0.6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D = -6.6A
V GS = -10V
-I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
I D = -3.3A
0.12
0.09
o
0.06
T A = 25 o C
0.03
0
T J , JUNCTION TEMPERATURE ( C)
-50
-25
0 25 50 75 100
o
125
150
0
2 4 6 8
-V GS , GATE TO SOURCE VOLTAGE (V)
10
24
20
Figure 3. On-Resistance Variation with
Temperature.
V DS = -10V
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
V GS = 0V
10
25 C
T A = 125 C
16
12
T A = -55 o C
o
125 o C
1
0.1
o
8
4
0
0.01
0.001
0.0001
25 o C
-55 o C
0
1 2 3
4
0
0.2
0.4 0.6 0.8 1 1.2 1.4
1.6
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA291P Rev B4
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