- 您现在的位置：买卖IC网 > Datasheet目录419 > FDMA410NZ (Fairchild Semiconductor)MOSFET N-CH 20V 9.5A 6-MICROFET Datasheet资料下载
参数资料
| 型号： | FDMA410NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 9.5A 6-MICROFET |
| 产品目录绘图： | MicroFET 2x2, SC-75 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 9.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1080pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA410NZDKR |
Electrical Characteristics T J = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
BV DSS
T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = 250 A, V GS = 0 V
I D = 250 A, referenced to 25 °C
V DS = 16 V, V GS = 0 V
V GS = ±8 V, V DS = 0 V
20
17
1
±10
V
mV/°C
A
A
On Characteristics
V GS(th)
V GS(th)
T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 A
I D = 250 A, referenced to 25 °C
0.4
0.7
–3
1.0
V
mV/°C
V GS = 4.5 V, I D = 9.5 A
V GS = 2.5 V, I D = 8.0 A
17
20
23
29
r DS(on)
Static Drain to Source On Resistance
V GS = 1.8 V, I D = 4.0 A
V GS = 1.5 V, I D = 2.0 A
24
29
36
50
m
V GS = 4.5 V, I D = 9.5 A,
T J = 125 °C
23
32
g FS
Forward Transconductance
V DD = 5 V, I D = 9.5 A
35
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10 V, V GS = 0 V,
f = 1 MHz
f = 1 MHz
815
130
85
2.1
1080
175
130
pF
pF
pF
Switching Characteristics
t d(on)
Turn-On Delay Time
7.5
15
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V DD = 10 V, I D = 9.5 A,
V GS = 4.5 V, R GEN = 6
V GS = 4.5 V , V DD = 10 V,
I D = 9.5 A
3.9
27
3.7
10
1.2
2.0
10
44
10
14
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0 V, I S = 2.0 A
(Note 2)
0.7
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 9.5 A, di/dt = 100 A/ s
12
2.6
22
10
ns
nC
NOTES:
1. R JA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
JC
is guaranteed by design while R
JA is
determined by
the user's board design.
a.52 °C/W when mounted
on a 1 in 2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 30 0 s, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
?2009Fairchild Semiconductor Corporation
FDMA410NZ Rev.B3
2
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| FDMA420NZ | MOSFET N-CH 20V 5.7A MICROFET |
| FDMA430NZ | MOSFET N-CH 30V 5A MICROFET |
| FDMA507PZ | MOSFET P-CH 20V 6-MICROFET |
| FDMA510PZ | MOSFET P-CH 20V 7.8A 6-MICROFET |
| FDMA520PZ | MOSFET P-CH 20V 7.3A MLP2X2 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA420NZ | 功能描述:MOSFET 20V 5.7A 30OHM SINGLE NCH 2.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA420NZ_0609 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench MOSFET 20V, 5.7A, 30mз |
| FDMA420NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 5.7A, 30mヘ |
| FDMA430NZ | 功能描述:MOSFET 2.5V SINGLE NCH SPECIFIED POWER RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA430NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
发布紧急采购，3分钟左右您将得到回复。