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| 型号： | FDMA430NZ |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5A MICROFET |
| 产品目录绘图： | MicroFET 2x2, SC-75 Single |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 11nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 800pF @ 10V |
| 功率 - 最大： | 2.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-MicroFET（2x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMA430NZDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
' B VDSS
' T J
I DSS
I GSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
V GS = 0V , I D = 250 P A
I D = 250 P A,
Referenced to 25°C
V DS = 24V, V GS = 0V,
V GS = r 12V, V DS = 0V
30
25.2
1
r 10
V
mV/°C
P A
P A
On Characteristics (Note 2)
V GS(th)
' V GS(th)
' T J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
V DS = V GS , I D = 250 P A
I D = 250 P A,
Referenced to 25°C
0.6
0.81
-3.2
1.5
V
mV/°C
V GS = 4.5V, I D = 5.0A
V GS = 4.0V, I D = 5.0A
23.6
23.9
40
41
R DS(ON)
Static Drain-Source On-Resistance
V GS = 3.1V, I D =4.5A
V GS = 2.5V, I D =4.5A
25.4
27.6
43
50
m :
V GS = 4.5V, I D =5.0A,
T J =150°C
37.0
61
g FS
Forward Transconductance
V DS = 5V, I D =5.0A
25.6
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 10V, V GS =0V,
f = 1.0MHz
f = 1.0MHz
600
110
75
3.5
800
150
115
pF
pF
pF
:
Switching Characteristics (Note 2)
t d(on)
Turn-On Delay Time
8.3
17
ns
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10V, I D = 1A
V GS = 4.5V, R GEN = 6 :
V DS = 10V, I D = 5.0A,
V GS = 4.5V
7.1
18.1
6.0
7.3
0.8
1.9
15
37
12
11
2
3
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
2.0
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0V, I S = 2.0A
I F = 5.0A,
di/dt = 100A/ P s
0.69
1.2
17
5
V
ns
nC
Notes:
1. R T JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
a. 5 2 °C/W when mounted
on a 1 in 2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 P s, Duty Cycle < 2.0%
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
FDMA430NZ Rev B 5
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDMA430NZ | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDMA430NZ_0609 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET 30V, 5.0A, 40mз |
| FDMA430NZ_08 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Single N-Channel 2.5V Specified PowerTrench㈢ MOSFET30V, 5.0A, 40mヘ |
| FDMA507PZ | 功能描述:MOSFET 20V Single P Channel PowerTrench Mosfet RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDMA510PZ | 功能描述:MOSFET -20V Single P-Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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