参数资料
型号: FDMA430NZ
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 30V 5A MICROFET
产品目录绘图: MicroFET 2x2, SC-75 Single
标准包装: 1
系列: PowerTrench®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 11nC @ 4.5V
输入电容 (Ciss) @ Vds: 800pF @ 10V
功率 - 最大: 2.4W
安装类型: 表面贴装
封装/外壳: 6-WDFN 裸露焊盘
供应商设备封装: 6-MicroFET(2x2)
包装: 标准包装
产品目录页面: 1609 (CN2011-ZH PDF)
其它名称: FDMA430NZDKR
Typical Characteristics T J = 25°C unless otherwise noted
5
1000
4
I D =5.0A
C iss
3
2
V DS = 10V
V DS = 20V
V DS = 15V
100
C oss
C rss
1
f = 1MHZ
V GS = 0V
0
0
2
4 6 8
Qg,GATE CHARGE (nC)
10
10
0.1
1 10
V DS ,DRAIN TO SOURCE VOLTAGE(V)
30
Figure 7. Gate Charge Characteristics
100
10us
Figure 8. Capacitance vs Drain to Source Voltage
5
10
100us
1ms
4
3
V GS =4.5V
1
OPERATION IN THIS
10ms
2
V GS =2.5V
AREA MAY BE
100ms
0.1
LIMITED BY R DS(ON)
1s
SINGLE PULSE
10s
1
0.01
0.1
1
T J =MAX RATED
T A = 25 o C
10
DC
50
0
25
R T JA =145 O C/W
50 75 100 125
150
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Safe Operating Area
T A , AMBIENT TEMPERATURE ( O C )
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
200
100
V GS = 10V
T A = 25 o C
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
10
CURRENT AS FOLLOWS:
150 – T
---------------------
SINGLE PULSE
I = I
25
125
A
1
0.5
10
10
10
10
10
10
10
10
-4
-3
-2
-1
t, PULSE WIDTH (s)
0
1
2
3
Figure 11. Single Pulse Maximum Power Dissipation
FDMA430NZ Rev B 5
4
www.fairchildsemi.com
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