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参数资料
| 型号： | FDMB3800N |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V MICROFET |
| 产品目录绘图： | MicroFET 3.0 x 1.9 Pkg |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.8A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.6nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 465pF @ 15V |
| 功率 - 最大： | 750mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP，MicroFET? |
| 供应商设备封装： | 8-MLP，MicroFET（3x1.9） |
| 包装： | 标准包装 |
| 产品目录页面： | 1609 (CN2011-ZH PDF) |
| 其它名称： | FDMB3800NDKR |
Electrical Characteristics T J = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
' BV DS S
' T J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
I D = 250 P A, V GS = 0V
I D = 250 P A, referenced to 25°C
30
24
V
mV/°C
I DSS
Zero Gate Voltage Drain Current
V DS = 24V,
V GS = 0V
T J = 55°C
1
10
P A
I GSS
Gate to Source Leakage Current
V GS = ±20V, V DS = 0V
±100
nA
On Characteristics
V GS(th)
' V GS(th )
' T J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V GS = V DS , I D = 250 P A
I D = 250 P A, referenced to 25°C
1
1.9
-4
3
V
mV/°C
V GS = 10V, I D = 4.8A
32
40
r DS(on)
Drain to Source On Resistance
V GS = 4.5V, I D = 4.3A
41
51
m :
V GS = 10V, I D = 4.8A, T J = 125°C
43
61
g FS
Forward Transconductance
V DS = 5V, I D = 4.8A
14
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS =15V, V GS = 0V,
f = 1MHz
f = 1MHz
350
90
40
3
465
120
60
pF
pF
pF
:
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V DD = 15V, I D = 1A
V GS = 10V, R GEN = 6 :
8
5
21
2
16
10
34
10
ns
ns
ns
ns
Q g(TOT)
Q gs
Total Gate Charge at 5V
Gate to Source Gate Charge
V GS = 0V to 5V
V DD = 15V
I D = 7.5A
4
1.0
5.6
nC
nC
Q gd
Gate to Drain “Miller” Charge
1.5
nC
Drain-Source Diode Characteristics
I S
Maximum Continuous Drain - Source Diode Forward Current
1.25
A
V SD
Source to Drain Diode Forward Voltage
V GS = 0V, I S = 1.25A
(Note 2)
0.8
1.2
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
I F = 4.8A, di/dt = 100A/ P s
17
7
ns
nC
Notes:
1: R T JA is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R T JC is guaranteed by design while R T CA is determined by
the user's board design.
a. 80°C/W when mounted on
a 1 in 2 pad of 2 oz copper
2: Pulse Test: Pulse Width < 300 P s, Duty cycle < 2.0%.
b. 165°C/W when mounted on a
minimum pad of 2 oz copper
FDMB3800N Rev.C2
2
www.fairchildsemi.com
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