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参数资料
| 型号： | FDS2582 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 150V 4.1A 8SOIC |
| 产品培训模块： | High Voltage Switches for Power Processing |
| 产品变化通告： | Mold Compound Change 12/Dec/2007 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 66 毫欧 @ 4.1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1290pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | FDS2582DKR |
Typical Characteristics T A = 25 ° C unless otherwise noted
100
10 μ s
7
STARTING T J = 25 o C
10
100 μ s
1
1ms
1
STARTING T J = 150 o C
OPERATION IN THIS
0.1
AREA MAY BE
LIMITED BY r DS(ON)
10m s
100ms
0.01
SINGLE PULSE
T J = MAX RATED
T C = 25 o C
1s
0.1
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
0.1
1 10 100
400
0.01
0.1 1 10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
25
20
15
10
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
T J = 150 o C
25 o C
T J =
30
25
20
15
10
T A = 25 o C
V GS = 10V
V GS = 6V
V GS = 7V
V GS = 5V
5
T J =
-55 o C
5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
0
0
3.5
4.0
4.5 5.0 5.5
6.0
0
0.5 1.0 1.5
2.0
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
66
V GS = 6V
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
64
2.0
62
60
58
56
V GS = 10V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.5
1.0
0.5
V GS = 10V, I D = 4.1A
1.0
1.5
2.0
2.5 3.0 3.5
4.0
4.5
-80
-40
0 40 80 120
160
I D , DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDS2582 Rev. B
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| FDS2582 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N SO-8 |
| FDS2582_Q | 功能描述:MOSFET 150V 4.5a .6 Ohms/VGS=1V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2670 | 功能描述:MOSFET SO-8 N-CH 200V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS2670 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO |
| FDS2670_01 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:200V N-Channel PowerTrench MOSFET |
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