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参数资料
| 型号： | FDS4141_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 10.8A 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 10.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2005pF @ 20V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DSS
V GS
I D
E AS
P D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V GS = 10V)
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Ratings
-40
±20
-10.8
-36
229
1.6
Units
V
V
A
mJ
W
T J , T STG Operating and Storage Temperature
Thermal Characteristics
-55 to +150
o C
R θ JC
Thermal Resistance Junction to Case
30
o
C/W
R θ JA
Thermal Resistance Junction to Ambient SO-8,
1in 2
copper pad area
81
o C/W
Package Marking and Ordering Information
Device Marking
FDS4141
Device
FDS4141_F085
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B VDSS
I DSS
I GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I D = -250 μ A, V GS = 0V
V DS = -32V,
V GS = ±20V,
-40
-
-
-
-
-
-
-1
±100
V
μ A
nA
On Characteristics
V GS(th)
Gate to Source Threshold Voltage
V GS = V DS , I D = -250 μ A
-1.0
-1.7
-3.0
V
I D = -10.5A, V GS = -10V
-
10.5
13.0
r DS(on)
g FS
Drain to Source On Resistance
Forward Transconductance
I D = -8.4A, V GS = -4.5V
I D = -10.5A, V GS = -10V,
T J = 125 o C
I D = -10.5A, V DD = -5V
-
-
14.8
15.3
34
19.0
19.0
m ?
S
Dynamic Characteristics
C iss
C oss
C rss
R g
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at -10V
V DS = -20V, V GS = 0V,
f = 1MHz
f = 1MHz
V GS = 0 to -10V
-
-
-
-
-
2005
355
190
5.0
35
-
-
-
-
45
pF
pF
pF
?
nC
Q g(-5)
Q gs
Q gd
Total Gate Charge at -5V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
V GS = 0 to -5V
V DD = -20V
I D = -10.5A
-
-
-
18.6
5.2
6.6
24.2
-
-
nC
nC
nC
FDS4141_F085 Rev. A
2
www.fairchildsemi.com
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|---|---|
| FDS4141 | MOSFET P-CH 40V 10.8A 8-SOIC |
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相关代理商/技术参数 |
参数描述 |
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| FDS4410 | 功能描述:MOSFET SO-8 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4410_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 30V 10A 8-Pin SOIC N |
| FDS4410A | 功能描述:MOSFET LOGIC LEVEL PO SINGLE NCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| FDS4435 | 制造商:Fairchild Semiconductor Corporation 功能描述:30VP-CH. FET 20 MO SO8 TR :ROHS COMPL |
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