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参数资料
| 型号： | FDS4141_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 5/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 40V 10.8A 8-SOIC |
| 标准包装： | 2,500 |
| 系列： | PowerTrench® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 10.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2005pF @ 20V |
| 功率 - 最大： | 1.6W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
Typical Characteristics
100
60
If R = 0
10
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
1
1ms
10ms
10
STARTING T J = 25 o C
100ms
0.1
OPERATION IN THIS
AREA MAY BE
SINGLE PULSE
TJ = MAX RATED
1s
DC
STARTING T J = 150 o C
TA = 25 C
LIMITED BY rDS(on)
o
0.01
0.01
0.1 1 10 100 300
-V DS , DRAIN TO SOURCE VOLTAGE (V)
1
0.01
0.1 1 10
t AV , TIME IN AVALANCHE (ms)
100
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
36
27
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = - 5V
36
27
V GS = - 10V
V GS = - 4.5V
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V GS = - 4V
18
T J = 150 o C
18
V GS = - 3.5V
V GS = - 3V
9
T J = 25 o C
T J = -55 o C
9
0
0
1 2 3
4
0
0
1 2
3
-V GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
50
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
1.8
40
I D = - 10.5A PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.4
30
T J = 150 o C
1.2
20
1.0
10
0
T J = 25 o C
0.8
0.6
I D = - 10.5A
V GS = - 10V
2
4 6 8
-V GS , GATE TO SOURCE VOLTAGE (V)
10
-75
-50
-25 0 25 50 75 100 125 150
T J , JUNCTION TEMPERATURE ( o C )
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
FDS4141_F085 Rev. A
5
www.fairchildsemi.com
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| FDS4435 | 功能描述:MOSFET SO-8 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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