参数资料
型号: FDS8928A
厂商: Fairchild Semiconductor
文件页数: 3/9页
文件大小: 0K
描述: MOSFET N/P-CH DUAL 30/20V 8SOIC
产品培训模块: High Voltage Switches for Power Processing
产品变化通告: Mold Compound Change 12/Dec/2007
产品目录绘图: Power MOSFET, 8-SOP, SO-8
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V,20V
电流 - 连续漏极(Id) @ 25° C: 5.5A,4A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 5.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 4.5V
输入电容 (Ciss) @ Vds: 900pF @ 10V
功率 - 最大: 900mW
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1604 (CN2011-ZH PDF)
其它名称: FDS8928ADKR
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS
(Note 2)
Symbol
t D(on)
Parameter
Turn - On Delay Time
Conditions
V DS = 6 V, I D = 1 A
Type
N-Ch
Min
Typ
6
Max
12
Units
ns
V GS = 4.5 V , R GEN = 6 ?
P-Ch
8
16
t r
Turn - On Rise Time
N-Ch
19
31
ns
P-Ch
23
37
t D(off)
Turn - Off Delay Time
V DS = -10 V, I D = -1 A
N-Ch
42
67
ns
V GS = -4.5 V , R GEN = 6 ?
P-Ch
260
360
t f
Turn - Off Fall Time
N-Ch
13
24
ns
P-Ch
90
125
Q g
Total Gate Charge
V DS = 10 V, I D = 5.5 A,
N-Ch
19.8
28
nC
V GS = 4.5 V
P-Ch
20
28
Q gs
Gate-Source Charge
V DS = -5 V, I D = -4 A,
N-Ch
P-Ch
2
2.8
nC
Q gd
Gate-Drain Charge
V GS = -5 V
N-Ch
6.3
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
P-Ch
3.2
I S
Maximum Continuous Drain-Source Diode Forward Current
N-Ch
P-Ch
1.3
-1.3
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = 1.3 A
V GS = 0 V, I S = -1.3 A
(Note 2)
(Note 2)
N-Ch
P-Ch
0.68
-0.7
1.2
-1.2
V
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θ JC is guaranteed by
design while R θ CA is determined by the user's board design.
a. 78 O C/W on a 0.5 in 2
pad of 2oz copper.
b. 125 O C/W on a 0.02 in 2
pad of 2oz copper.
c. 135 O C/W on a 0.003 in 2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%..
FDS8928A Rev. B
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