参数资料
型号: FGP5N60LS
厂商: Fairchild Semiconductor
文件页数: 2/8页
文件大小: 0K
描述: IGBT 600V 10A 83W TO220
产品目录绘图: IGBT TO-220 Package
标准包装: 400
IGBT 类型: 场截止
电压 - 集电极发射极击穿(最大): 600V
Vge, Ic时的最大Vce(开): 3.2V @ 12V,14A
电流 - 集电极 (Ic)(最大): 10A
功率 - 最大: 83W
输入类型: 标准
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220
包装: 管件
产品目录页面: 1610 (CN2011-ZH PDF)
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width
Quantity
FGP5N60LS
FGP5N60LS
TO-220
Tube
N/A
N/A
50
Electrical Characteristics of the IGBT
T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV CES
Collector to Emitter Breakdown Voltage V GE = 0 V, I C = 250 ? A
600
-
-
V
? BV CES
? T J
I CES
I GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V GE = 0 V, I C = 250 ? A
V CE = V CES , V GE = 0 V
V GE = V GES , V CE = 0 V
-
-
-
0.8
-
-
-
250
±400
V/ o C
? A
nA
On Characteristics
V GE(th)
V CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I C = 250 ? A, V CE = V GE
I C = 5 A , V GE = 15 V
I C = 5 A , V GE = 15 V,
T C = 125 o C
I C = 14 A , V GE = 12 V
I C = 14 A , V GE = 12 V,
T C = 125 o C
2.7
-
-
-
-
3.9
1.7
1.8
2.7
3.1
4.5
2.1
-
3.2
-
V
V
V
V
V
Dynamic Characteristics
C ies
Input Capacitance
-
278
-
pF
C oes
C res
Output Capacitance
Reverse Transfer Capacitance
V CE = 30 V , V GE = 0 V,
f = 1 MHz
-
-
28
11
-
-
pF
pF
Switching Characteristics
t d(on)
t r
Turn-On Delay Time
Rise Time
-
-
4.3
1.6
-
-
ns
ns
t d(off)
t f
E on
E off
E ts
t d(on)
t r
t d(off)
t f
E on
E off
E ts
Q g
Q ge
Q gc
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
V CC = 400 V, I C = 5 A,
R G = 10 ?? , V GE = 15 V,
Inductive Load, T C = 25 o C
V CC = 400 V, I C = 5 A,
R G = 10 ? , V GE = 15 V,
Inductive Load, T C = 125 o C
V CE = 400 V, I C = 5 A,
V GE = 15 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
36
118
38
130
168
4.1
1.8
37
150
80
168
248
18.3
1.6
7.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
? J
? J
? J
ns
ns
ns
ns
? J
? J
? J
nC
nC
nC
?2010 Fairchild Semiconductor Corporation
FGP5N60LS Rev. C1
2
www.fairchildsemi.com
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