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参数资料
| 型号： | FQB25N33TM_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 330V 25A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 330V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 2010pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
April 20 10
FQB25N33 TM_F 085
330V N-Channel MOSFET
Features
? 25A, 330V, R DS(on) = 0.23 ? @V GS = 10V
? Low gate charge (typical 58nC)
? Low Crss (typical 40pF)
? Fast switching
? 100% avalanche tested
? Improved dv/dt capability
? Qualified to AEC Q101
? RoHS Compliant
Absolute Maximum Ratings
tm
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Farichild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimized on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficient switched mode power supplies,
active power factor correction, electronic lamp ballast
based on half bridge topology.
Symbol
V DSS
Drain-Source Voltage
Parameter
Ratings
330
Units
V
I D
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
25
16.0
A
A
I DM
Drain Current
- Pulsed
(Note 1)
100
A
V GSS
Gate -Source Voltage
±30
V
E AS
I AR
E AR
dv/dt
P D
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalance Energy
Peak Diode Recovery dv/dt
Power Dissipation (T A = 25 o C) *
Power Dissipation (T C = 25 o C)
- Derate above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
370
25
37
4.5
3.1
250
2.0
mJ
A
mJ
V/ns
W
W
W/ o C
T J , T STG Operating and Storage Temperature
-55 to +150
o
C
T L
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
Units
R θ JC
Thermal Resistance, Junction to Case
0.5
o
C/W
R θ JA
Thermal Resistance, Junction to Ambient *
40
o C/W
R θ JA
Thermal Resistance, Junction to Ambient
62.5
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount)
? 20 10 Fairchild Semiconductor Corporation
F Q B25N33 TM _F085 Rev. A
1
www.fairchildsemi.com
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