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参数资料
| 型号： | FQB25N33TM_F085 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 330V 25A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 330V |
| 电流 - 连续漏极(Id) @ 25° C： | 25A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 12.5A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 2010pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
Package Marking and Ordering Information
Device Marking
FQB25N33
Device
FQB25N33 TM_F085
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
B VDSS
Drain-Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
330
--
--
V
Breakdown Voltage Temperature Coefficient I D = 250 μ A, Referenced to 25 C
? B VDSS/
? T J
o
--
0.34
--
V/ o C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Forward
V DS = 330V,V GS = 0V
V DS = 264V,T C =125°C
V GS = 30V, V DS = 0V
V GS = -30V, V DS = 0V
--
--
--
--
--
--
--
--
1
10
100
-100
μ A
nA
nA
On Characteristics
V GS(th)
R DS( on )
g FS
Gate Threshold Voltage
Drain to Source On Resistance
Forward Transonductance
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 12.5A,
V DS = 50V, I D = 12.5A, (Note 4)
3.0
--
--
--
0.18
1
5.0
0.23
--
V
?
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25V, V GS = 0V,
f = 1.0MHz
--
--
--
1510
290
40
2010
385
60
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g(TOT)
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
V DD = 165V, I D = 25A
R GS = 25 ?
(Note 4, 5)
V DS = 297V, I D = 25A,
V GS = 15V,
(Note 4, 5)
--
--
--
--
--
--
--
20
100
90
70
58
11.2
21
35
160
145
110
75
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
25
100
A
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0, I S = 25A
--
--
1.5
V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0, I S = 25A,
dI F /dt = 100A/ μ s
(Note 4)
--
--
275
3.6
--
--
ns
μ C
Notes:
1: Repetitive Rating : Pluse width Limited by maximum junction temperature
2: L = 1.79mH, I AS = 25A, V DD = 50V, R G = 25 ? , Starting T J = 25 o C
3: I SD ≤ 25A, di/dt ≤ 200A/ μ s, V DD ≤ BV DSS , Starting T J = 25 o C
4: Pulse Test : Pulse width ≤ 300 μ s, Duty cycle ≤ 2%
5: Essentially independent of operating temperature
FQ B25N33 TM_F085 Rev. A
2
www.fairchildsemi.com
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