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参数资料
| 型号： | GS8342TT06BGD-500T |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | SRAM |
| 英文描述： | 4M X 8 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 |
| 文件页数： | 9/30页 |
| 文件大小： | 267K |
| 代理商： | GS8342TT06BGD-500T |
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Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00 5/2011
17/30
2011, GSI Technology
Preliminary
GS8342TT06/11/20/38BD-550/500/450/400/350
Operating Currents
Parameter
Symbol
Test Conditions
-550
-500
-450
-400
-350
Notes
0°
to
70°C
–
40°
to
85°C
0°
to
70°C
–
40°
to
85°C
0°
to
70°C
–
40°
to
85°C
0°
to
70°C
–
40°
to
85°C
0°
to
70°C
–
40°
to
85°C
Operating
Current(x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
tKHKH Min
TBD
2, 3
Operating
Current(x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
tKHKH Min
TBD
2, 3
Operating
Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
tKHKH Min
TBD
2, 3
Operating
Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
tKHKH Min
TBD
2, 3
Standby
Current
(NOP): DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
0.2 V
or
VDD – 0.2 V
TBD
2, 4
Notes:
1. Power measured with output pins floating.
2. Minimum cycle, IOUT = 0 mA
3. Operating current is calculated with 50% read cycles and 50% write cycles.
4. Standby Current is only after all pending read and write burst operations are completed.
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相关代理商/技术参数 |
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|---|---|
| GS8342TT11BD-500 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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| GS8342TT11BD-550 | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
| GS8342TT11BD-550I | 制造商:GSI Technology 功能描述:165 FBGA - Bulk |
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