参数资料
型号: HIP2100EVAL2
厂商: Intersil
文件页数: 1/12页
文件大小: 0K
描述: EVAL BOARD 48VDC-5UDC CONVERTER
标准包装: 1
主要目的: 电源管理,半 H 桥驱动器(外部 FET)
已用 IC / 零件: HIP2100
已供物品:
?
HIP2100
Data Sheet
April 2, 2010
FN4022.14
100V/2A Peak, Low Cost, High Frequency
Half Bridge Driver
The HIP2100 is a high frequency, 100V Half Bridge
N-Channel power MOSFET driver IC. The low-side and
high-side gate drivers are independently controlled and
matched to 8ns. This gives the user maximum flexibility in
dead-time selection and driver protocol. Undervoltage
protection on both the low-side and high-side supplies force
the outputs low. An on-chip diode eliminates the discrete
diode required with other driver ICs. A new level-shifter
topology yields the low-power benefits of pulsed operation
with the safety of DC operation. Unlike some competitors,
the high-side output returns to its correct state after a
momentary undervoltage of the high-side supply.
Ordering Information
Features
? Drives N-Channel MOSFET Half Bridge
? SOIC, EPSOIC, QFN and DFN Package Options
? SOIC, EPSOIC and DFN Packages Compliant with 100V
Conductor Spacing Guidelines of IPC-2221
? Pb-Free Product Available (RoHS Compliant)
? Bootstrap Supply Max Voltage to 114VDC
? On-Chip 1 Ω Bootstrap Diode
? Fast Propagation Times for Multi-MHz Circuits
? Drives 1000pF Load with Rise and Fall Times Typ. 10ns
? CMOS Input Thresholds for Improved Noise Immunity
? Independent Inputs for Non-Half Bridge Topologies
PART
TEMP.
? No Start-Up Problems
NUMBER
(Note 1)
PART
MARKING
RANGE
(°C)
PACKAGE
PKG.
DWG. #
? Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground, or HS Slewing at High dv/dt
HIP2100IB
HIP2100IBZ
(Note 2)
2100 IB
2100 IBZ
-40 to +125 8 Ld SOIC
-40 to +125 8 Ld SOIC
(Pb-free)
M8.15
M8.15
? Low Power Consumption
? Wide Supply Range
HIP2100EIBZ 2100 EIBZ
-40 to +125 8 Ld EPSOIC
M8.15C
? Supply Undervoltage Protection
(Note 2)
HIP2100IRZ HIP 2100IRZ
(Note 2)
HIP2100IR4Z 21 00IR4Z
(Note 2)
(Pb-free)
-40 to +125 16 Ld 5x5 QFN L16.5x5
(Pb-free)
-40 to +125 12 Ld 4x4 DFN L12.4x4A
(Pb-free)
? 3 Ω Driver Output Resistance
? QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves
NOTES:
2. These Intersil Pb-free plastic packaged products employ special Pb-
free material sets, molding compounds/die attach materials, and
100% matte tin plate plus anneal (e3 termination finish, which is
RoHS compliant and compatible with both SnPb and Pb-free
soldering operations). Intersil Pb-free products are MSL classified
at Pb-free peak reflow temperatures that meet or exceed the Pb-
free requirements of IPC/JEDEC J STD-020.
PCB Efficiency and has a Thinner Profile
Applications
? Telecom Half Bridge Power Supplies
? Avionics DC/DC Converters
? Two-Switch Forward Converters
? Active Clamp Forward Converters
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright ? Intersil Americas Inc. 2004, 2010. All Rights Reserved.
All other trademarks mentioned are the property of their respective owners.
相关PDF资料
PDF描述
HIP2100EVAL EVAL BOARD MINI HALF BRIDGE
HIP4080AEVAL EVALUATION BOARD HIP4080/4081
HIP4082EVAL EVAL BOARD FET DRIVER HIP4082
HIP4086EVAL EVALUATION BOARD GP HIP4086
HIP6004EVAL1 EVALUATION BOARD HIP6004
相关代理商/技术参数
参数描述
HIP2100IB 功能描述:功率驱动器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP2100IBT 功能描述:功率驱动器IC TAPE AND REEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP2100IBTS2075 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP2100IBZ 功能描述:功率驱动器IC HIP2100IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
HIP2100IBZT 功能描述:功率驱动器IC VER 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube