参数资料
| 型号： | HIP2100EVAL2 |
| 厂商： | Intersil |
| 文件页数： | 6/12页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD 48VDC-5UDC CONVERTER |
| 标准包装： | 1 |
| 主要目的： | 电源管理，半 H 桥驱动器（外部 FET） |
| 已用 IC / 零件： | HIP2100 |
| 已供物品： | 板 |
HIP2100
Pin Descriptions
SYMBOL
V DD
HB
HO
HS
HI
LI
V SS
LO
EPAD
DESCRIPTION
Positive Supply to lower gate drivers. De-couple this pin to V SS . Bootstrap diode connected to HB.
High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
High-Side Output. Connect to gate of High-Side power MOSFET.
High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to
this pin.
High-Side input.
Low-Side input.
Chip negative supply, generally will be ground.
Low-Side Output. Connect to gate of Low-Side power MOSFET.
Exposed Pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
Timing Diagrams
LI
HI ,
LI
HI
t HPLH ,
t LPLH
t HPHL ,
t LPHL
LO
HO ,
LO
FIGURE 3.
Typical Performance Curves
10
HO
10
t MON
FIGURE 4.
t MOFF
1
1
T = +150°C
T = -40°C
T = +125°C
T = +25°C
0.1
T = +150°C
T = +125°C
T = +25°C
T = -40°C
0.1
0.01
10k
100k
1M
0.01
10k
100k
1M
FREQUENCY (Hz)
FIGURE 5. OPERATING CURRENT vs FREQUENCY
6
FREQUENCY (Hz)
FIGURE 6. HB TO V SS OPERATING CURRENT vs
FREQUENCY
FN4022.14
相关PDF资料 |
PDF描述 |
|---|---|
| HIP2100EVAL | EVAL BOARD MINI HALF BRIDGE |
| HIP4080AEVAL | EVALUATION BOARD HIP4080/4081 |
| HIP4082EVAL | EVAL BOARD FET DRIVER HIP4082 |
| HIP4086EVAL | EVALUATION BOARD GP HIP4086 |
| HIP6004EVAL1 | EVALUATION BOARD HIP6004 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP2100IB | 功能描述:功率驱动器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBT | 功能描述:功率驱动器IC TAPE AND REEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBTS2075 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP2100IBZ | 功能描述:功率驱动器IC HIP2100IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBZT | 功能描述:功率驱动器IC VER 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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