参数资料
| 型号： | HIP2100EVAL2 |
| 厂商： | Intersil |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD 48VDC-5UDC CONVERTER |
| 标准包装： | 1 |
| 主要目的： | 电源管理，半 H 桥驱动器（外部 FET） |
| 已用 IC / 零件： | HIP2100 |
| 已供物品： | 板 |
HIP2100
Electrical Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified. (Continued)
T J = +25°C
T J = -40°C TO +125°C
MIN
MAX
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
BOOT STRAP DIODE
Low-Current Forward Voltage
V DL
I VDD-HB = 100μA
-
0.45 0.55
-
0.7
V
High-Current Forward Voltage
Dynamic Resistance
V DH
R D
I VDD-HB = 100mA
I VDD-HB = 100mA
-
-
0.7
0.8
0.8
1
-
-
1
1.5
V
Ω
LO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V OLL
V OHL
I OHL
I OLL
I LO = 100mA
I LO = -100mA, V OHL = V DD -V LO
V LO = 0V
V LO = 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
HO GATE DRIVER
Low Level Output Voltage
High Level Output Voltage
Peak Pullup Current
Peak Pulldown Current
V OLH
V OHH
I OHH
I OLH
I HO = 100mA
I HO = -100mA, V OHH = V HB -V HO
V HO = 0V
V HO = 12V
-
-
-
-
0.25
0.25
2
2
0.3
0.3
-
-
-
-
-
-
0.4
0.4
-
-
V
V
A
A
Switching Specifications
V DD = V HB = 12V, V SS = V HS = 0V, No Load on LO or HO, Unless Otherwise Specified.
T J = +25°C
T J = -40°C TO + 125°C
TEST
MIN
MAX
PARAMETERS
SYMBOL
CONDITIONS
MIN TYP MAX
(Note 7)
(Note 7)
UNITS
Lower Turn-Off Propagation Delay (LI Falling to LO Falling)
Upper Turn-Off Propagation Delay (HI Falling to HO Falling)
Lower Turn-On Propagation Delay (LI Rising to LO Rising)
Upper Turn-On Propagation Delay (HI Rising to HO Rising)
Delay Matching: Lower Turn-On and Upper Turn-Off
Delay Matching: Lower Turn-Off and Upper Turn-On
t LPHL
t HPHL
t LPLH
t HPLH
t MON
t MOFF
-
-
-
-
-
-
20
20
20
20
2
2
35
35
35
35
8
8
-
-
-
-
-
-
45
45
45
45
10
10
ns
ns
ns
ns
ns
ns
Either Output Rise/Fall Time
Either Output Rise/Fall Time (3V to 9V)
Either Output Rise Time Driving DMOS
Either Output Fall Time Driving DMOS
Minimum Input Pulse Width that Changes the Output
Bootstrap Diode Turn-On or Turn-Off Time
t RC , t FC
t R , t F
t RD
t FD
t PW
t BS
C L = 1000pF
C L = 0.1μF
C L = IRFR120
C L = IRFR120
-
-
-
-
-
-
10
0.5
20
10
-
10
-
0.6
-
-
-
-
-
-
-
-
-
-
-
0.8
-
-
50
-
ns
μs
ns
ns
ns
ns
NOTE:
7. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
5
FN4022.14
相关PDF资料 |
PDF描述 |
|---|---|
| HIP2100EVAL | EVAL BOARD MINI HALF BRIDGE |
| HIP4080AEVAL | EVALUATION BOARD HIP4080/4081 |
| HIP4082EVAL | EVAL BOARD FET DRIVER HIP4082 |
| HIP4086EVAL | EVALUATION BOARD GP HIP4086 |
| HIP6004EVAL1 | EVALUATION BOARD HIP6004 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HIP2100IB | 功能描述:功率驱动器IC 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBT | 功能描述:功率驱动器IC TAPE AND REEL RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBTS2075 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| HIP2100IBZ | 功能描述:功率驱动器IC HIP2100IBZVERSION 100V HALF BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| HIP2100IBZT | 功能描述:功率驱动器IC VER 100V H-BRDG DRVR RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。